Semiconductors containing perfluoroether acyl oligothiophene compounds
First Claim
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1. A semiconductor device comprising an n-channel semiconductor layer comprising a compound of the formula:
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Abstract
Semiconductor devices are described that include a semiconductor layer that comprises a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis-perfluoroether acyl oligothiophene compound. Additionally, methods of making semiconductor devices are described that include depositing a semiconductor layer that contains a perfluoroether acyl oligothiophene compound, preferably an α,ω-bis(2-perfluoroether acyl oligothiophene compound.
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Citations
21 Claims
- 1. A semiconductor device comprising an n-channel semiconductor layer comprising a compound of the formula:
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15. A method of preparing an organic thin film transistor, said method comprising:
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providing a gate electrode; depositing a gate dielectric layer on a surface of the gate electrode; preparing a semiconductor layer adjacent to the gate dielectric layer opposite the gate electrode, said semiconductor layer comprising a compound of the formula; - View Dependent Claims (16, 17)
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18. A method of preparing an organic thin film transistor, said method comprising:
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providing a gate electrode; depositing a gate dielectric layer on a surface of the gate electrode; positioning a source electrode and a drain electrode adjacent to the gate dielectric layer opposite the gate electrode, wherein the source electrode and the drain electrode are separated by an area over the gate dielectric layer; preparing a semiconductor layer on a surface of the source electrode, on the surface of the drain electrode, and in the area between the source electrode and the drain electrode, said semiconductor layer comprising a compound of the formula; - View Dependent Claims (19, 20)
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Specification