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Semiconductor device with improved design freedom of external terminal

  • US 7,151,320 B2
  • Filed: 11/28/2003
  • Issued: 12/19/2006
  • Est. Priority Date: 01/08/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor chip having a first main surface on which a plurality of electrode pads is provided, a second main surface which opposes said first main surface, and a plurality of side surfaces between said first main surface and said second main surface;

    an extension portion which includes a first face and a second face opposing said first face, and which is formed in contact with said side surfaces of said semiconductor chip to thereby surround said semiconductor chip and such that said first face is at a substantially equal level to the level of said first main surface;

    a base having a first surface and a second surface which opposes said first surface, said first surface contacting the second face of said extension portion and the second main surface of said semiconductor chip, which is capable of conducting heat generated by said semiconductor chip such that this heat is dispersed into the atmosphere from said second surface side;

    an insulating film which is formed on said first face and said first main surface such that a part of each of said plurality of electrode pads is exposed;

    a plurality of wiring patterns electrically connected to said electrode pads and extended from said electrode pads to the upper side of the first face of said extension portion, respectively;

    a sealing portion which is formed on said wiring patterns and said insulating film such that a part of each of said wiring patterns is exposed; and

    a plurality of external terminals provided over said wiring patterns in a region including the upper side of said extension portion;

    further comprising a plurality of electrode posts formed between said wiring patterns and said external terminals,wherein said sealing portion is formed such that the top surface of said electrode posts is exposed;

    wherein said electrode posts are formed from a conductive material; and

    wherein a thin oxidation layer is formed on the surface of said electrode posts.

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