Operation scheme for programming charge trapping non-volatile memory

• US 7,151,692 B2
• Filed: 05/20/2005
• Issued: 12/19/2006
• Est. Priority Date: 01/27/2004
• Status: Active Grant

• Current Assignee: Macronix International Co., Ltd.
• Original Assignee: Macronix International Co., Ltd.
• Inventors: Wu, Chao-I
• Primary Examiner(s): TRAN, MICHAEL THANH
• Application Number:
  US11/133,991
• Publication Number:
  US 20050219906A1
• Time in Patent Office: 578 Days
• Field of Search: 365/185.03, 365/185.2
• US Class Current: 365/185.03
• CPC Class Codes: G11C 16/12 Programming voltage switching circuits
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells

Abstract

A circuit and method for self-converging programming of a charge storage memory cell, such as NROM or floating gate flash. The method includes determining a data value from one of more than two data values to be stored in the memory cell, and applying a gate voltage to the control gate at one of a predetermined set of gate voltage levels selected in response to the determined data value. Programming parameters are controlled to establish a self-converging threshold state that is determined by the selected gate voltage. In this manner, the threshold voltage converges on a target threshold corresponding with the determined data value for the memory cell. Program verify operations are reduced or eliminated in various embodiments, reducing the overall time required for the program operation, and improving device performance. A second portion of the program operation can include verify operations to improve threshold margins across the array.

Claims

1. A method for programming a multi-level charge storage memory cell having a first terminal and a second terminal acting as a source and a drain in a substrate, a charge storage element, and a control gate, comprising:

determining a data value from one of more than two data values to be stored in the memory cell;

applying a gate voltage to the control gate relative to a reference voltage, a source voltage to the first terminal relative to the reference voltage, and a drain voltage to the second terminal relative to the reference voltage, in a program operation to induce charge transfer by hot electron injection to the charge storage element to establish a threshold voltage for the memory cell; and

holding the gate voltage substantially constant at one of a predetermined set of gate voltages in response to the determined data value during a portion of the program operation in which the voltage threshold converges on a target threshold corresponding with the determined data value.

2. The method of claim 1, wherein the operation is self-converging during a portion of the program operation in which the voltage threshold converges on an ending threshold.

3. The method of claim 1, wherein the applying includes applying a sequence of drain voltage pulses having pulse heights to the second terminal of the memory cell during said portion of the program operation and increasing the pulse heights of the drain voltage pulses in at least two successive pulses in the sequence.

4. The method of claim 1, wherein the applying includes applying a sequence of drain voltage pulses having pulse heights to the second terminal of the memory cell during the program operation, the sequence of drain voltage pulses including a first set of pulses applied during said portion of the program operation, without verify operations between the pulses, and a second set of pulses applied during a second portion of the program operation, and including applying verify pulses between at least two successive pulses in the second set of pulses.

5. The method of claim 1, including coupling the substrate to the reference voltage during the operation.

6. The method of claim 1, wherein said charge storage element in the memory cell comprises a non-conductive charge trap.

7. The method of claim 1, wherein said charge storage element in the memory cell comprises a conductive floating gate.

8. The method of claim 1, wherein said memory cell comprises an NROM cell.

9. The method of claim 1, wherein said memory cell comprises a flash memory cell.

10. An integrated circuit, comprising:

a memory array including decoding circuitry to select memory cells for programming, the memory cells having first and second terminals in a substrate acting as sources and drains, a charge storage element, and a control gate, wherein the memory cell is adapted to store more than two data values;

a voltage supply circuit coupled to the memory array adapted to apply a gate voltage, a source voltage and a drain voltage to the control gate, first terminal and second terminal, respectively, of memory cells in the array; and

a program controller coupled to the decoding circuitry and to the voltage supply circuit, the program controller adapted to execute a self-converging program operation for a selected memory cell to induce charge transfer by hot electron injection to the charge storage element and establish one of a set of threshold voltages corresponding with a respective one of the more than two data values in the selected memory cell, the program operation including

determining a data value from one of more than two data values to be stored in the memory cell;

applying a gate voltage to the control gate relative to a reference voltage, a source voltage to the first terminal relative to the reference voltage, and a drain voltage to the second terminal relative to the reference voltage, in a program operation to induce charge transfer by hot electron injection to the charge storage element to establish a threshold voltage for the memory cell; and

holding the gate voltage substantially constant at one of a predetermined set of gate voltages in response to the determined data value during a portion of the program operation in which the voltage threshold converges on a target threshold corresponding with the determined data value.

11. The integrated circuit of claim 10, wherein the applying includes applying a sequence of drain voltage pulses having pulse heights to the second terminal of the memory cell during said portion of the program operation and increasing the pulse heights of the drain voltage pulses in at least two successive pulses in the sequence.

12. The integrated circuit of claim 10, wherein the applying includes applying a sequence of drain voltage pulses having pulse heights to the second terminal of the memory cell during the program operation, the sequence of drain voltage pulses including a first set of pulses applied during said portion of the program operation, without verify operations between the pulses, and a second set of pulses applied during a second portion of the program operation, and including applying verify pulses between at least two successive pulses in the second set of pulses.

13. The integrated circuit of claim 10, including holding the gate voltage substantially constant during said portion of the program operation.

14. The integrated circuit of claim 10, wherein the substrate is coupled to the reference voltage during the operation.

15. The integrated circuit of claim 10, wherein said charge storage element in the memory cell comprises a non-conductive charge trap.

16. The integrated circuit of claim 10, wherein said charge storage element in the memory cell comprises a conductive floating gate.

17. The integrated circuit of claim 10, wherein said memory cell comprises an NROM cell.

18. The integrated circuit of claim 10, wherein said memory cell comprises a flash memory cell.