Microelectromechanical structure and a method for making the same
First Claim
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1. An etching method comprising:
- loading a workpiece into an etching chamber, the workpiece comprising a first area to be removed by a spontaneous vapor phase chemical etchant and a second area to remain after the first area being removed, wherein the second area comprises an intermetallic compound;
providing the spontaneous vapor phase etchant to the etching chamber;
removing the first area while leaving behind the second area; and
wherein the chemical etchant comprises a chemical species that is selected from the group consisting of;
interhalogens and noble gas halides.
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Abstract
A microstructure and the method for making the same are disclosed herein. The microstructure has structural members, at least one of which comprises an intermetallic compound. In making such a microstructure, a sacrificial material is employed. After completion of forming the structural layers, the sacrificial material is removed by a spontaneous vapor phase chemical etchant.
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Citations
57 Claims
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1. An etching method comprising:
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loading a workpiece into an etching chamber, the workpiece comprising a first area to be removed by a spontaneous vapor phase chemical etchant and a second area to remain after the first area being removed, wherein the second area comprises an intermetallic compound; providing the spontaneous vapor phase etchant to the etching chamber; removing the first area while leaving behind the second area; and wherein the chemical etchant comprises a chemical species that is selected from the group consisting of;
interhalogens and noble gas halides. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method comprising:
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forming a workpiece, comprising; providing a substrate; depositing a first and second sacrificial layer on the substrate; and forming a first and second structural layers on the sacrificial layers, wherein the first and second structural layers comprises an intermetallic compound; loading the workpiece to an etching chamber; and removing at least a portion of the first and second sacrificial layers using a spontaneous vapor phase chemical etchant, wherein the chemical etchant comprises a chemical species that is selected from the group consisting of;
interhalogens and noble gas halides. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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49. A method for making a microstructure, the method comprising;
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depositing a sacrificial material on a substrate, the sacrificial material comprising a metal; depositing a structural layer after depositing the sacrificial material, wherein the structural layer comprises a material other than the sacrificial material, and wherein the material of the structural layer comprises an intermetallic compound; and removing the sacrificial material with a spontaneous vapor phase chemical etchant, wherein the chemical etchant comprises a chemical species that is selected from the group consisting of;
interhalogens and noble gas halides. - View Dependent Claims (50, 51, 52, 53, 54, 55, 56, 57)
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Specification