Nitride semiconductor light emitting device and method for manufacturing the same

• US 7,154,124 B2
• Filed: 06/03/2004
• Issued: 12/26/2006
• Est. Priority Date: 12/23/2003
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Kim, Sung Wook, Han, Young Suk, Yoon, Suk Kil
• Primary Examiner(s): NGUYEN, CUONG QUANG
• Application Number:
  US10/859,146
• Publication Number:
  US 20050133811A1
• Time in Patent Office: 936 Days
• Field of Search: 257 77-103
• US Class Current: 257/88
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48237 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

A nitride semiconductor light emitting device includes a substrate, an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate, an n-type electrode formed on the electrode region, an activation layer, a p-type nitride semiconductor layer, and a p-type electrode which has a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and a band-shaped extension connected to the bonding pad to extend along a lateral side of the top surface of the p-type nitride semiconductor layer in opposite directions from a connected portion of the extension with the bonding pad.

Claims

1. A nitride semiconductor light emitting device, comprising:

a substrate having an approximately rectangular top surface;

an n-type nitride semiconductor layer formed on the substrate and provided with an electrode region of a predetermined area adjacent to a center of one lateral side of the top surface of the substrate;

an n-type electrode formed on the electrode region;

an activation layer comprising an un-doped nitride semiconductor material and formed on the n-type nitride semiconductor layer such that the electrode region is exposed;

a p-type nitride semiconductor layer formed on the activation layer; and

a p-type electrode formed on the p-type nitride semiconductor layer, the p-type electrode having a bonding pad adjacent to a center of another lateral side opposite to the lateral side adjacent to the electrode region to have a predetermined space from the n-type electrode and having a band-shaped extension connected to the bonding pad to extend along a lateral side, in opposite directions, at which the bonding pad is formed and along opposite lateral sides at which the n-type electrode and the bonding pad are not formed,

wherein the distance between the n-type electrode and the p-type electrode is substantially constant and configured to flow current uniformly over an entire light emitting region.

2. The device as set forth in claim 1, further comprising:

a buffer layer formed on the top surface of the substrate for providing lattice matching.

3. The device as set forth in claim 1, further comprising:

a transparent layer formed on the top surface of the p-type nitride semiconductor layer for providing an ohmic contact.