Nitride-based semiconductor light-emitting device and manufacturing method thereof

• US 7,154,125 B2
• Filed: 04/23/2003
• Issued: 12/26/2006
• Est. Priority Date: 04/23/2002
• Status: Expired due to Term

• Current Assignee: LedComm LLC (IPValuation Partners, LLC)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kimura, Daigaku, Koide, Norikatsu, Hata, Toshio, Fudeta, Mayuko
• Primary Examiner(s): Flynn, Nathan
• Assistant Examiner(s): Sefer, Ahmed N.
• Application Number:
  US10/422,404
• Publication Number:
  US 20030218179A1
• Time in Patent Office: 1,343 Days
• Field of Search: 257/103, 257/76, 257/79, 257/98
• US Class Current: 257/95
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

Claims

1. A nitride-based semiconductor light-emitting device comprising:

a reflective layer formed on a support substrate;

a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer;

wherein

a light extracting surface located above said n-type nitride-based semiconductor layer has irregularities; and

a high refractive index film including one selected from a group consisting of silicon nitride, indium oxide, neodymium oxide, zirconium oxide, titanium oxide, cerium oxide and bismuth oxide is formed on said n-type nitride-based semiconductor layer, and an upper surface of said high refractive index film is said light extracting surface.

2. A nitride-based semiconductor light-emitting device according to claim 1, wherein

said support substrate is formed by one of nickel provided by nickel plating, a metal provided by metal plating, Au, an alloy of Au and Sn, and an electrically-conductive semiconductor.

3. A nitride-based semiconductor light-emitting device according to claim 1, further comprising

a translucent electrode formed on said light extracting surface, wherein said electrode is formed of a metal selected from a group consisting of aluminum, titanium, zirconium, hafnium, vanadium, niobium, and indium-tin oxide.