Thermal imaging for semiconductor process monitoring

• US 7,155,363 B1
• Filed: 11/25/1998
• Issued: 12/26/2006
• Est. Priority Date: 12/01/1997
• Status: Expired due to Fees

• Current Assignee: MKS Instruments Incorporated
• Original Assignee: MKS Instruments Incorporated
• Inventors: Xu, Jiazhan, Rosenthal, Peter A., Charpenay, Sylvie, Cosgrove, Joseph E.
• Primary Examiner(s): Bui, Bryan
• Application Number:
  US09/199,677
• Time in Patent Office: 2,953 Days
• Field of Search: 702/99, 702/130, 702134-138, 702/131, 702/132, 702/172, 374/126, 374/128, 374/129, 250225-226, 250/252.1, 356/45, 356/367, 356/369, 356/381, 356/382
• US Class Current: 702/135
• CPC Class Codes: G01J 5/0003 for sensing the radiant heat transfer of samples, e.g. emittance meter
• CPC Class Codes: G01J 5/58 using absorption; using extinction effect
• CPC Class Codes: G01J 5/60 using determination of colour temperature

Abstract

The method measures the temperature, emissivity, and other properties of relatively smooth surfaces radiating thermal energy, and is especially adapted for monitoring semiconductor fabrication processes. Temperature is determined by relating measured radiance to the predictions of the Planck radiation law, using knowledge of the emissivity determined from an analysis of the polarization of the thermally emitted radiance. Additional information regarding the properties of thin films, such as thickness and composition, can be computed from the emissivity or the ratio of the emissivities measured at two independent polarizations. Because the data are obtained from the intrinsic thermal radiance, rather than from an extrinsic light source, the measurement can be performed when it is inconvenient or impossible to provide a light source for reflectance measurements.

Claims

1. A method for determining the temperature T at at least one location on the surface of a sample, comprising the steps:

(a) measuring, at an oblique take-off angle and at at least one wavelength v, radiance at at least two linearly independent polarizations p1 and p2;

(b) computing a polarized radiance ratio R_p1(v)/R_p2(v) of said measured radiances R_p1(v), R_p2(v) to determine the associated polarized emissivity ratio ε

_p1(v)/ε

_p2(v), in accordance with the relationship R_p1(v)/R_p2(v)=ε

_p1(v)ε

_p2(v);

(c) applying at least one additional constraint to compute the value of at least one of the emissivities, ε

_p1(v), ε

_p2(v), constituting said polarized emissivity ratio;

(d) determining the temperature T at said one location by solving the equation;

R_p1(v,T)=ε

_p1(vT)×

P(v,T),

wherein P(v,T) is the Planck function;

(e) irradiating said surface with radiation including said wavelength v, and measuring reflectance ρ

from said surface at said wavelength v and said polarizations p1 and p2 to thereby determine the reflectance-derived ratio 1−

ε

_p1(v)/1−

ε

_p2(v); and

(f) applying said reflectance-derived ratio as said at least one additional constraint in said step (c) for computing said at least one emissivity value.

2. The method of claim 1 wherein one of said polarizations p1 and p2 is determined in the parallel direction, and the other of said polarizations p1 and p2 is determined in the perpendicular direction, both with reference to the take-off plane.

3. The method of claim 1 wherein said surface is the surface of a film comprising said sample, said method including the further step of utilizing one of said polarized radiance ratio and said polarized emissivity ratio to determine at least one additional parameter of said film, said parameter being selected from the group consisting of thickness, composition, roughness, crystallinity, interface quality, and strain.

4. The method of claim 1 wherein said additional constraint of said step (c) is determined from model-based analysis using at least one layered optical stack model incorporation a Fresnel model for interfaces.

5. The method of claim 4 wherein said model-based analysis utilizes a fitting routine in which at least one parameter selected from the class consisting of film thickness, composition, optical properties, and fractional area within a measurement spot is varied to achieve values consistent with said determined polarized emissivity ratio.

6. The method of claim 1 including the additional step of providing a look-up table in which values of emissivity are correlated to values of polarized emissivity ratios, and wherein the emissivity value in said look-up table, corresponding to said determined emissivity ratio, constitutes said additional constraint applied in said step (c).

7. The method of claim 1 wherein said steps (a) through (d) are repeated at each of a multiplicity of locations on said sample surface to develop a temperature distribution map of said surface.

8. A method for determining the emissivity ε

at at least one location on the surface of a sample, comprising the steps;

(a) measuring, at an oblique take-off angle and at at least one wavelength v, radiance at at least two linearly independent polarizations p1 and p2;

(b) computing a polarized radiance ratio R_p1(v)/R_p2(v) of said measured radiances R_p1(v), R_p2(v) to determine the associated polarized emissivity ratio ε

_p1(v)/ε

_p2(v), in accordance with the relationship R_p1(v)/R_p2(v)=ε

_p1(v)/ε

_p2(v);

(c) applying at least one additional constraint to compute the value of at least one of the emissivities, ε

_p1(v), ε

_p2(P), constituting said polarized emissivity ratio;

(d) irradiating said surface with radiation including said wavelength v, and measuring reflectance ρ

from said surface at said wavelength v and said polarizations p1 and p2 to thereby determine the reflectance-derived ratio 1−

ε

_p1(v)/1−

ε

_p2(v); and

(e) applying said reflectance-derived ratio as said at least one additional constraint in said step (c) for computing said at least one emissivity value.

9. The method of claim 8 wherein one of said polarizations p1 and p2 is determined in the parallel direction, and the other of said polarizations p1 and p2 is determined in the perpendicular direction, both directions being taken with reference to the take-off plane.

10. The method of claim 8 wherein said additional constraint of said step (c) is determined from model-based analysis using at least one layered optical stack model incorporation a Fresnel model for interfaces.

11. Apparatus for determining at least one emissivity value ε

from a surface of a sample, comprising a radiance sensor including a radiation detector, polarization selective means, wavelength selective means, and electronic data processing means, said sensor being configured for carrying out the following steps;

(a) measuring, at an oblique take-off angle and at at least one wavelength v, radiance at at least two linearly independent polarizations p1 and p2;

(b) computing a polarized radiance ratio R_p2(v)/R_p2(v) of said measured radiances R_p1(v), R_p2(v) to determine the associated polarized emissivity ratio ε

_p1(v)/ε

_p2(v), in accordance with the relationship R_p1(v)/R_p2(v)=ε

_p1(v)/ε

_p2(v);

(c) applying at least one additional constraint to compute the value of at least one of the emissivities, ε

_p1(v), ε

_p2(v), constituting said polarized emissivity ratio;

(d) measuring reflectance ρ

from said surface at said wavelength v and said polarizations p1 and p2 to thereby determine the reflectance-derived ratio 1−

ε

_p1(v)/1−

ε

_p2(v); and

(e) applying said reflectance-derived ratio as said at least one additional constraint in said step (c) for computing said at least one emissivity value.

12. The apparatus of claim 11 wherein said sensor is further configured to carry out the additional step of determining the temperature T at said one location by solving the equation:

R_p1(v,T)=ε

_p1(vT)×

P(v,T),

wherein P(v,T) is the Planck function.

13. The apparatus of claim 11 wherein said polarization selective means is a polarizer selected from the group consisting of wire grid, glan, and Brewster polarizers.

14. The apparatus of claim 11 wherein said wavelength selective means is a device selected from the group consisting of interference filter sets, tunable filters, gratings, prisms, Michelson interferometers, and FT-IR spectrometers.

15. The apparatus of claim 14 wherein said sensor comprises an FT-IR spectrometer.

16. The apparatus of claim 11 additionally including a source of illuminating radiation disposed for projecting a beam of radiation toward a surface of a sample being subjected to emissivity determination therein.

17. The apparatus of claim 16 wherein said source of the illuminating radiation and said sensor are so disposed that the beam of radiation from said source is reflected by the sample to said sensor.

18. The apparatus of claim 16 additionally including means for modulating the beam of radiation from said source.

19. The apparatus of claim 11 wherein said sensor incorporates a look-up table by which emissivity values are correlated to values of polarized emissivity ratios.