Group III nitride compound semiconductor light-emitting element
First Claim
Patent Images
1. A method of forming a Group III nitride compound semiconductor light-emitting element said method comprising:
- forming a buffer layer on a sapphire substrate;
forming a Group III nitride compound semiconductor on said buffer layer; and
after said forming said Group III Nitride compound semiconductor, preparing a light-emitting surface of said substrate which is opposite said buffer layer by grinding said surface using an abrasive material having a particle size in a range of 10 μ
m≦
r≦
50 μ
m until said substrate has a predetermined thickness and said surface has a roughness in a range of 0.05≦
Ra≦
1 μ
m for uniformizing light emitted from said light-emitting surface.
1 Assignment
0 Petitions
Accused Products
Abstract
In a flip chip type Group III nitride compound semiconductor light-emitting element, a surface of a substrate serving as a light-emitting surface is formed as a rough surface so that radiated light is scattered by the surface.
-
Citations
28 Claims
-
1. A method of forming a Group III nitride compound semiconductor light-emitting element said method comprising:
-
forming a buffer layer on a sapphire substrate; forming a Group III nitride compound semiconductor on said buffer layer; and after said forming said Group III Nitride compound semiconductor, preparing a light-emitting surface of said substrate which is opposite said buffer layer by grinding said surface using an abrasive material having a particle size in a range of 10 μ
m≦
r≦
50 μ
m until said substrate has a predetermined thickness and said surface has a roughness in a range of 0.05≦
Ra≦
1 μ
m for uniformizing light emitted from said light-emitting surface. - View Dependent Claims (2, 9, 10, 12, 13, 14, 15, 16, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
-
-
3. A method of forming a Group III nitride compound semiconductor light-emitting element, said method comprising:
-
forming a buffer layer on a sapphire substrate; forming a Group III nitride compound semiconductor on said buffer layer; forming at least one electrode on a same said side of said substrate as said Group III nitride compound semiconductor; and after said forming said Group III Nitride compound semiconductor, preparing a light-emitting surface on a side of said substrate which is opposite said buffer layer by grinding said surface using an abrasive material having a particle size in a range of 10 μ
m ≦
r≦
50 μ
m until said substrate has a predetermined thickness and said light-emitting surface has a roughness in a range of 0.05 ≦
Ra≦
1 μ
m uniformizing light emitted from said light-emitting surface. - View Dependent Claims (4, 5, 6, 7, 8, 11)
-
-
17. A method of forming a light-emitting device, comprising:
-
forming a light-emitting element comprising; forming a buffer layer on a sapphire substrate; forming a Group III nitride compound semiconductor on said buffer layer; and after said forming said Group III Nitride compound semiconductor, preparing a light-emitting surface of said substrate which is opposite said buffer layer by grinding said surface using an abrasive material having a particle size in a range of 10 μ
m≦
r≦
50 μ
m until said substrate has a predetermined thickness and said surface has a roughness in a range of 0.05≦
Ra≦
1 μ
m for uniformizing light emitted from said light-emitting surface; andforming a support on which said light-emitting element is mounted.
-
Specification