Methods of downstream microwave photoresist removal and via clean, particularly following Stop-On TiN etching
First Claim
1. A process for removal of a photoresist layer from a semiconductor wafer in a chamber, comprising:
- a. creating a microwave-energy-generated plasma with no RIE and at a standard temperature, with a first gas mixture comprising oxygen and a fluorine-containing gas, the amount of the fluorine-containing gas sufficient to convert a polymer on side walls of etched features in the wafer to a water soluble form, and contacting the wafer with the microwave-energy-generated plasma;
b. subsequent to creating, stripping the photoresist layer from the wafer using a microwave-energy-generated plasma of a second gas mixture comprising oxygen and a nitrogen species, and no fluorine-containing gas and without an RIE process and at a relatively high temperature;
c. determining an endpoint to the stripping of the photoresist layer by a determined change in visible light in the chamber; and
d. removing the converted polymer with water.
7 Assignments
0 Petitions
Accused Products
Abstract
A process for photoresist layer removal from a semiconductor wafer comprises exposing at relatively high temperature the wafer to an RIE-free microwave-energy-generated plasma of a primary gas mixture, the exposing causing photoresist removal such as by ashing. The method also comprises determining an endpoint to the removal by a determined change in the visible light emanating from a chamber containing the wafer.
A multi-step process of the present invention comprises the above method and a preliminary RIE-free microwave-energy-generated plasma that solubilizes polymer on walls of vias of the wafer. This multi-step process also comprises, following the exposing step, a cooling step, a cooling step with a temperature check, and a deglazing step. The deglazing step also uses an RIE-free microwave-energy-generated plasma. Specific gas mixtures for the respective plasmas are exemplified. Other embodiments of methods of the present invention are comprised of less steps, or a consolidation of such steps.
-
Citations
10 Claims
-
1. A process for removal of a photoresist layer from a semiconductor wafer in a chamber, comprising:
-
a. creating a microwave-energy-generated plasma with no RIE and at a standard temperature, with a first gas mixture comprising oxygen and a fluorine-containing gas, the amount of the fluorine-containing gas sufficient to convert a polymer on side walls of etched features in the wafer to a water soluble form, and contacting the wafer with the microwave-energy-generated plasma; b. subsequent to creating, stripping the photoresist layer from the wafer using a microwave-energy-generated plasma of a second gas mixture comprising oxygen and a nitrogen species, and no fluorine-containing gas and without an RIE process and at a relatively high temperature; c. determining an endpoint to the stripping of the photoresist layer by a determined change in visible light in the chamber; and d. removing the converted polymer with water. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A multi-step fabrication method for a semiconductor wafer comprising:
-
a. contacting the wafer with a first microwave-generated plasma formed with a first gas mixture comprising oxygen and a fluorine-containing species, the wafer between about 30 and about 50 degrees Celsius, the first microwave-generated plasma being effective to convert the polymer on side walls of etched features in the wafer to a water soluble form; b. contacting the wafer with a second microwave-generated plasma formed with a second gas mixture comprising oxygen and a nitrogen species, and no fluorine-containing gas, heating the wafer to about 250 degrees Celsius, the second microwave-generated plasma being effective to remove a photoresist layer from the wafer; c. cooling the wafer; d. contacting the wafer with a third microwave-generated plasma formed with a third gas mixture comprising oxygen, a nitrogen species, and a fluorine-containing species, the wafer less than about 135 degrees Celsius, and the third microwave-generated plasma being effective to remove oxides from metal surfaces on the wafer; and e. removing the converted polymer with water. - View Dependent Claims (8, 9, 10)
-
Specification