Method for making a semiconductor device having a high-k gate dielectric layer and a metal gate electrode
First Claim
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1. A method for making a semiconductor device comprising:
- forming a dielectric layer on a substrate;
forming a trench within the dielectric layer;
forming a high-k gate dielectric layer within the trench;
forming a first metal layer on the high-k gate dielectric layer;
forming a second metal layer on the first metal layer;
removing at least part of the second metal layer from above the dielectric layer using a chemical mechanical polishing step; and
removing at least part of the first metal layer and the high-k gate dielectric layer from above the dielectric layer using a plasma dry etch step.
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Abstract
A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, forming a trench within the dielectric layer, and forming a high-k gate dielectric layer within the trench. After forming a first metal layer on the high-k gate dielectric layer, a second metal layer is formed on the first metal layer. At least part of the second metal layer is removed from above the dielectric layer using a polishing step, and additional material is removed from above the dielectric layer using an etch step.
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Citations
20 Claims
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1. A method for making a semiconductor device comprising:
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forming a dielectric layer on a substrate; forming a trench within the dielectric layer; forming a high-k gate dielectric layer within the trench; forming a first metal layer on the high-k gate dielectric layer; forming a second metal layer on the first metal layer; removing at least part of the second metal layer from above the dielectric layer using a chemical mechanical polishing step; and removing at least part of the first metal layer and the high-k gate dielectric layer from above the dielectric layer using a plasma dry etch step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for making a semiconductor device comprising:
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forming a dielectric layer on a substrate; forming a trench within the dielectric layer; forming a high-k gate dielectric layer within the trench; forming a first metal layer on the high-k gate dielectric layer; forming a sealant layer on the first metal layer; forming a second metal layer on the metal carbide sealant layer; removing the second metal layer and at least part of the sealant layer from above the dielectric layer using a chemical mechanical polishing step; and removing at least part of the first metal layer and the high-k gate dielectric layer from above the dielectric layer using a plasma dry etch step. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method for making a semiconductor device comprising:
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forming a dielectric layer on a substrate; forming a trench within the dielectric layer; forming a high-k gate dielectric layer within the trench; forming a first metal layer on the high-k gate dielectric layer; forming a sealant layer on the first metal layer; forming a second metal layer on the sealant layer; removing at least part of the second metal layer from above the dielectric layer using a chemical mechanical polishing step; and removing at least part of the sealant, the first metal layer, and the high-k gate dielectric layer from above the dielectric layer using a plasma dry etch step. - View Dependent Claims (19, 20)
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Specification