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Process monitoring device for sample processing apparatus and control method of sample processing apparatus

  • US 7,158,848 B2
  • Filed: 02/17/2006
  • Issued: 01/02/2007
  • Est. Priority Date: 03/05/2001
  • Status: Expired due to Term
First Claim
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1. A plasma processing apparatus for processing a sample by using plasma on a lot unit basis, comprising:

  • a plurality of sensors which detect plural kinds of information relating to a processing state of the sample, as monitor data;

    data selecting means for selecting a detection time range of the monitor data thus detected, which is used for monitoring the plasma processing apparatus;

    a signal filter which converts the monitor data within the selected detection time range into a converted signal;

    a processing performance prediction section which predicts a pattern shape of the sample based on the converted signal;

    a parameter modification quantity calculation section which calculates a correction quantity of a processing parameter, for decreasing a deviation between the predicted pattern shape and a standard value;

    a storing unit which stores the correction quantity of the processing parameter, anda correction quantity conversion table used to convert the correction quantity of a processing parameter obtained by the parameter modification quantity calculation section when a kind of a next sample of a next lot is different from the sample, thereby to use a converted correction quantity of the processing parameter for a processing of the next sample.

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