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GeBPSG top clad for a planar lightwave circuit

  • US 7,160,746 B2
  • Filed: 07/27/2001
  • Issued: 01/09/2007
  • Est. Priority Date: 07/27/2001
  • Status: Expired due to Term
First Claim
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1. A method of depositing a top clad layer for an optical waveguide of a planer lightwave circuit, the method comprising the steps of:

  • a) providing a flow rate for a Ge dopant gas for a SiO2 tap clad layer deposition;

    b) providing a flow rate for a P dopant gas for the top clad layer deposition;

    c) providing a flow rate for a B dopant gas for the top clad layer deposition; and

    d) controlling the flow rates for the Ge dopant gas, P dopant gas and B dopant gas to form the top clad layer, and wherein controlling the flow rates reduces crystallization areas within the top clad layer and wherein the top clad layer comprises refractive index stability across an anneal temperature range from 900°

    C. to 1050°

    C.

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