GeBPSG top clad for a planar lightwave circuit
First Claim
1. A method of depositing a top clad layer for an optical waveguide of a planer lightwave circuit, the method comprising the steps of:
- a) providing a flow rate for a Ge dopant gas for a SiO2 tap clad layer deposition;
b) providing a flow rate for a P dopant gas for the top clad layer deposition;
c) providing a flow rate for a B dopant gas for the top clad layer deposition; and
d) controlling the flow rates for the Ge dopant gas, P dopant gas and B dopant gas to form the top clad layer, and wherein controlling the flow rates reduces crystallization areas within the top clad layer and wherein the top clad layer comprises refractive index stability across an anneal temperature range from 900°
C. to 1050°
C.
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Accused Products
Abstract
A method of depositing a top clad layer for an optical waveguide of a planar lightwave circuit. A GeBPSG top clad layer for an optical waveguide structure of a planar lightwave circuit is fabricated such that the top clad layer comprises doped silica glass, wherein the dopant includes Ge (Germanium), P (Phosphorus), and B (Boron). In depositing a top clad layer for the optical waveguide, three separate doping gasses (e.g., GeH4, PH3, and B2H6) are added during the PECVD (plasma enhanced chemical vapor deposition) process to make Ge, P and B doped silica glass (GeBPSG). The ratio of the Ge, P, and B dopants is configured to reduce the formation of crystallization areas within the top clad layer and maintain a constant refractive index within the top clad layer across an anneal temperature range. A thermal anneal process for the top clad layer can be a temperature within a range of 950C to 1050C. The GeBPSG top clad layer reduces the insertion loss of passive arrayed waveguide grating devices and active planar lightwave circuit devices.
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Citations
16 Claims
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1. A method of depositing a top clad layer for an optical waveguide of a planer lightwave circuit, the method comprising the steps of:
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a) providing a flow rate for a Ge dopant gas for a SiO2 tap clad layer deposition; b) providing a flow rate for a P dopant gas for the top clad layer deposition; c) providing a flow rate for a B dopant gas for the top clad layer deposition; and d) controlling the flow rates for the Ge dopant gas, P dopant gas and B dopant gas to form the top clad layer, and wherein controlling the flow rates reduces crystallization areas within the top clad layer and wherein the top clad layer comprises refractive index stability across an anneal temperature range from 900°
C. to 1050°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 11, 12, 13, 14)
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10. A method of depositing a GeBPSG top clad layer for a planar lightwave circuit device, the method comprising the steps of:
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a) providing a flow rate for a Ge dopant gas for a SiO2 top clad layer deposition; b) providing a flow rate for a P dopant gas for the top clad layer deposition; c) providing a flow rate for a B dopant gas for the top clad layer deposition; and d) controlling the flow rates for the Ge dopant gas, P dopant gas, and B dopant gas to form the top clad layer thereby reducing crystallization areas within the top clad layer and wherein the top clad layer comprises refractive index stability across an anneal temperature range from 900°
C. to 1050°
C. - View Dependent Claims (15, 16)
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Specification