Polycrystalline TFT uniformity through microstructure mis-alignment
First Claim
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1. A method of making a polycrystalline device including two or more thin-film transistors of substantially uniform microstructure, comprising the steps of:
- (a) receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction; and
(b) placing at least portions of two or more thin-film transistors on said received film tilted at an angle relative to said periodic structure of said thin film, such that the number of long grain boundaries in any of said portions remains substantially uniform.
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Abstract
Methods of making a polycrystalline silicon thin-film transistor having a uniform microstructure. One exemplary method requires receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction, and placing at least portions (410, 420) of one or more thin-film transistors on the received film such that they are tilted relative to the periodic structure of the thin film.
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Citations
19 Claims
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1. A method of making a polycrystalline device including two or more thin-film transistors of substantially uniform microstructure, comprising the steps of:
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(a) receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction; and (b) placing at least portions of two or more thin-film transistors on said received film tilted at an angle relative to said periodic structure of said thin film, such that the number of long grain boundaries in any of said portions remains substantially uniform. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of making a device including thin-film transistors, comprising the steps of:
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(a) receiving a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction in an amount λ
; and(b) placing at least portions of one or more thin-film transistors having a width W on said received film tilted at an angle θ
relative to said periodic structure λ
of said thin film, such that W sin(θ
)=mλ
, where m is substantially equal to an integer. - View Dependent Claims (9, 10, 11, 12)
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13. A device including two or more polycrystalline silicon thin-film transistors of substantially uniform microstructure, comprising:
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(a) a polycrystalline silicon thin film having a grain structure which is periodic in at least a first direction; and (b) at least two or more thin-film transistor portions placed on said polycrystalline silicon thin film, each tilted at an angle relative to said periodic structure of said thin film, such that that the number of long grain boundaries in any of said portions remains substantially uniform. - View Dependent Claims (14, 15, 16, 17, 18, 19)
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Specification