Structure and method for fabricating semiconductor structures and devices for detecting an object
First Claim
1. A semiconductor structure comprising:
- a monocrystalline compound semiconductor material;
a source component overlying the monocrystalline compound semiconductor material, the source component being operable to generate electromagnetic energy;
first interconnect coupled between the antenna and the source component, the first interconnect being operable to guide a first portion of the electromagnetic energy from the source component to an antenna that transmits the first portion of the electromagnetic energy;
a receiver component overlying the monocrystalline compound semiconductor material; and
a second interconnect coupled between the antenna and the receiver component,wherein the first interconnect is further coupled between the source component and the receiver component and operable to guide a second portion of the electromagnetic energy from the source component to the receiver component, the second portion being operable as a reference signal, and wherein the receiver component is operable to generate a detection signal in response to a reflection of the first portion of the electromagnetic energy received at the antenna from an object that is external to the semiconductor structure, the first portion of electromagnetic energy being coupled to the receive component by the second interconnect.
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Abstract
High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. A high quality layer of compound semiconductor material is used to form a source component and a receiver component that are interconnected with an antenna and each other within a semiconductor structure that can detect a parameter, such as the speed, of an object.
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Citations
18 Claims
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1. A semiconductor structure comprising:
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a monocrystalline compound semiconductor material; a source component overlying the monocrystalline compound semiconductor material, the source component being operable to generate electromagnetic energy; first interconnect coupled between the antenna and the source component, the first interconnect being operable to guide a first portion of the electromagnetic energy from the source component to an antenna that transmits the first portion of the electromagnetic energy; a receiver component overlying the monocrystalline compound semiconductor material; and a second interconnect coupled between the antenna and the receiver component, wherein the first interconnect is further coupled between the source component and the receiver component and operable to guide a second portion of the electromagnetic energy from the source component to the receiver component, the second portion being operable as a reference signal, and wherein the receiver component is operable to generate a detection signal in response to a reflection of the first portion of the electromagnetic energy received at the antenna from an object that is external to the semiconductor structure, the first portion of electromagnetic energy being coupled to the receive component by the second interconnect. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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Specification