System and method for providing thermal compensation for an interferometric modulator display

• US 7,161,730 B2
• Filed: 07/22/2005
• Issued: 01/09/2007
• Est. Priority Date: 09/27/2004
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: IDC, LLC
• Inventors: Floyd, Philip D.
• Primary Examiner(s): Thompson; Timothy
• Application Number:
  US11/188,130
• Publication Number:
  US 20060077519A1
• Time in Patent Office: 536 Days
• Field of Search: 359/290, 359/291, 359/223, 359/224, 359/292, 359/295, 359/238, 359/578, 359/579
• US Class Current: 359/291
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means
• CPC Class Codes: G02B 7/008 with means for compensating for changes in temperature or for controlling the temperature; thermal stabilisation

Abstract

Various embodiments of the invention relate to methods and systems for thermal compensation of a MEMS device. In certain embodiments, an interferometric modulator includes a first electrode and a flexible second electrode situated on a substrate. The flexible second electrode is a movable layer that can comprise aluminum or an aluminum-containing material, while the substrate can comprise glass. When the interferometric modulator undergoes a temperature change, the difference in thermal expansion rates results in a decrease in the tensile strain on the movable layer. Embodiments of the present invention provide a film configured to compensate for the thermal expansion. The film has a thermal expansion coefficient less than the substrate so as to compensate for expansion of the movable layer with respect to the substrate when the MEMS is exposed to thermal energy. The film compensates for mismatch in thermal expansion between the materials of the substrate and movable layer so as to inhibit undesirable optical characteristics.

Claims

1. A system for thermal compensation of a microelectromechanical system (MEMS) device, the system comprising:

a substrate characterized by a first thermal expansion coefficient;

at least two members coupled to the substrate, the members being spaced apart by a space;

a movable layer characterized by a second thermal expansion coefficient and coupled to the at least two members; and

a film located proximate to the substrate and having a third thermal expansion coefficient, the film extending below and across the space between the two members,

wherein the film is configured to compensate for expansion of the movable layer with respect to the substrate when the MEMS device is exposed to thermal energy.

3. The system of claim 1, wherein the film is embedded within the substrate.

4. The system of claim 1, further comprising a cavity located between the substrate and the movable layer and a reflective surface portion, the reflective surface portion being movable between a first position and a second position, the first position being a first distance from the substrate, the second position being a second distance from the substrate.

5. The system of claim 1, wherein the film comprises a nickel-iron alloy.

6. The system of claim 1, wherein the film comprises a lithium aluminum silicate (LAS).

7. The system of claim 1, wherein the third thermal expansion coefficient is less than the second thermal expansion coefficient.

8. The system of claim 1, wherein the film comprises a material having a low coefficient of thermal expansion.

11. The system of claim 1, wherein the film is at least partially opaque.

2. A system for thermal compensation of a microelectromechanical system (MEMS) device, the system comprising:

a substrate characterized by a first thermal expansion coefficient;

a member coupled to the substrate;

a movable layer characterized by a second thermal expansion coefficient and coupled to the member; and

a film located proximate to the substrate and having a third thermal expansion coefficient less than the first thermal expansion coefficient,

wherein the film is configured to compensate for expansion of the movable layer with respect to the substrate when the MEMS device is exposed to thermal energy, and wherein the film is positioned below the substrate.

9. A system for thermal compensation of a microelectromechanical system (MEMS) device, the system comprising:

a substrate characterized by a first thermal expansion coefficient;

a member coupled to the substrate;

a movable layer characterized by a second thermal expansion coefficient and coupled to the member; and

a film located proximate to the substrate and having a third thermal expansion coefficient less than the first thermal expansion coefficient,

wherein the film is configured to compensate for expansion of the movable layer with respect to the substrate when the MEMS device is exposed to thermal energy, and wherein the film comprises a material having a negative coefficient of thermal expansion.

10. A system for thermal compensation of a microelectromechanical system (MEMS) device, the system comprising:

a substrate characterized by a first thermal expansion coefficient;

a member coupled to the substrate;

a movable layer characterized by a second thermal expansion coefficient and coupled to the member; and

a film located proximate to the substrate and having a third thermal expansion coefficient less than the first thermal expansion coefficient,

wherein the film is configured to compensate for expansion of the movable layer with respect to the substrate when the MEMS device is exposed to thermal energy, and wherein the film is at least partially transparent.

12. A light modulator comprising:

a substrate;

a first electrode layer over the substrate;

a second electrode layer over the substrate;

a support coupling the substrate to the second electrode layer and forming a cavity between the first electrode layer and the second electrode layer;

a reflective surface substantially parallel to the first electrode layer and coupled to the second electrode layer; and

a film configured to induce tensile stress in the second electrode layer in response to increased temperature.

13. The light modulator of claim 12, wherein the substrate comprises a material exhibiting a first thermal expansion coefficient, and the film exhibits a second thermal expansion coefficient, wherein the first thermal expansion coefficient is greater that the second thermal expansion coefficient.

14. The light modulator of claim 12, wherein the film comprises a nickel-iron alloy.

15. The light modulator of claim 12, wherein the film comprises a lithium aluminum silicate (LAS).

16. The light modulator of claim 12, wherein the film comprises a material having a low coefficient of thermal expansion.

17. The light modulator of claim 12, wherein the film comprises a material having a negative coefficient of thermal expansion.

18. The light modulator of claim 12, wherein the film comprises a material having a lower coefficient of thermal expansion than the second electrode layer.

19. The light modulator of claim 12, wherein the film comprises a material having a lower coefficient of thermal expansion than the substrate.

33. The light modulator of claim 12, further comprising:

a display;

a processor that is in electrical communication with said display, said processor being configured to process image data;

a memory device in electrical communication with said processor.

34. The system of claim 33, further comprising:

a driver circuit configured to send at least one signal to said display.

35. The apparatus of claim 34, further comprising:

a controller configured to send at least a portion of said image data to said driver circuit.

36. The apparatus of claim 33, further comprising:

an image source module configured to send said image data to said processor.

37. The apparatus of claim 36, wherein said image source module comprises at least one of a receiver, transceiver, and transmitter.

38. The apparatus of claim 33, further comprising:

an input device configured to receive input data and to communicate said input data to said processor.

20. A light modulator comprising:

means for supporting a light modulator;

means for conducting a first electrical signal;

means for conducting a second electrical signal;

means for coupling the means for supporting the light modulator to the means for conducting a second electrical signal and forming a cavity between the means for conducting a first electrical signal and the means for conducting a second electrical signal;

means for reflecting light being substantially parallel to the means for conducting a first electrical signal and coupled to the means for conducting a second electrical signal; and

means for inducing tensile stress in the means for conducting a second electrical signal in response to increased temperature.

21. The light modulator of claim 20, wherein the cavity is configured to cause interference between at least two wavelengths of electromagnetic radiation.

22. The light modulator of claim 20, wherein the means for inducing tensile stress is located below the means for supporting a light modulator.

23. A method of manufacturing a light modulator comprising:

providing a substrate;

forming a first electrode layer over the substrate;

forming a second electrode layer over the substrate;

forming a film configured to induce tensile stress in the second electrode layer in response to increased temperature;

forming a support connecting the substrate to the second electrode layer; and

forming a reflective surface substantially parallel to the first electrode layer and coupled to the second electrode layer, the reflective surface movable along a direction substantially perpendicular to the reflective surface.

24. The method of claim 23, wherein the film is embedded within the substrate.

25. The method of claim 23, wherein the film has a shape of a grid.

26. The method of claim 23, wherein the film comprises a material having a low coefficient of thermal expansion.

27. The method of claim 23, wherein the film comprises a material having a negative coefficient of thermal expansion.

28. A light modulator made by the process of claim 23.

29. A method for balancing thermal coefficients to maintain tension in an interferometric modulator having a substrate and a movable layer separated by a cavity, the interferometric modulator further having a reflective surface on the movable layer facing the cavity, the cavity being configured to cause interference between at least two wavelengths of electromagnetic radiation, the method comprising:

selecting a material having a first coefficient of thermal expansion for a substrate;

selecting a material having a second coefficient of thermal expansion for a movable layer; and

selecting a film based at least in part on a comparison of the first coefficient of thermal expansion and the second coefficient of thermal expansion so as to maintain tension in the movable layer.

30. The method of claim 29, wherein the film is located below the substrate.

31. A method for balancing thermal coefficients to maintain tension in a MEMS device having a substrate and a movable layer separated by a cavity, and a plurality of support structures, the method comprising:

selecting a material having a first coefficient of thermal expansion for a substrate;

selecting a material having a second coefficient of thermal expansion for a movable layer; and

selecting a material having a third coefficient of thermal expansion for a thermal expansion coefficient compensation based at least in part on the first coefficient of thermal expansion so as to maintain tension in the movable layer when the MEMS device is exposed to an increased temperature, wherein the material with the third coefficient of thermal expansion extends continuously beneath the plurality of support structures.

32. A method for balancing thermal coefficients to maintain tension in a MEMS device having a substrate and a movable layer separated by a cavity, the method comprising:

selecting a material for a movable layer of a MEMS device, the material configured to be in tension A at a first temperature and in tension B at a second temperature when suspended between support structures of the MEMS device, wherein the tension B is less than the tension A; and

selecting a material for a second layer of the MEMS device, the material having a coefficient of thermal expansion that maintains the movable layer at the tension A when the movable layer is at the second temperature, wherein the second layer extends continuously beneath the support structures.