Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements
First Claim
1. A magnetic element comprising:
- a pinned layer, the pinned layer being ferromagnetic and having a first magnetization;
a current confined layer having at least one channel in an insulating matrix, the at least one channel being conductive and extending through the current confined layer; and
a free layer, the free layer being ferromagnetic and having a second magnetization, the current confined layer residing between the pinned layer and the free layer and being adjacent to the pinned layer and the free layer;
wherein the pinned layer, the free layer, and the current confined layer are configured to allow the second magnetization of the free layer to be switched using spin transfer.
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Accused Products
Abstract
A method and system for providing and magnetic element is disclosed. In one aspect, the magnetic element includes at least a pinned layer, a free layer, and a current confined layer residing between the pinned layer and the free layer. The pinned layer is ferromagnetic and has a first magnetization. The current confined layer has at least one channel in an insulating matrix. The channel(s) are conductive and extend through the current confined layer. The free layer is ferromagnetic and has a second magnetization. The pinned layer, the free layer, and the current confined layer are configured to allow the magnetization of the free layer to be switched using spin transfer. The magnetic element may also include other layers, including layers for spin valve(s), spin tunneling junction(s), dual spin valve(s), dual spin tunneling junction(s), and dual spin valve/tunnel structure(s).
183 Citations
34 Claims
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1. A magnetic element comprising:
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a pinned layer, the pinned layer being ferromagnetic and having a first magnetization; a current confined layer having at least one channel in an insulating matrix, the at least one channel being conductive and extending through the current confined layer; and a free layer, the free layer being ferromagnetic and having a second magnetization, the current confined layer residing between the pinned layer and the free layer and being adjacent to the pinned layer and the free layer; wherein the pinned layer, the free layer, and the current confined layer are configured to allow the second magnetization of the free layer to be switched using spin transfer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 31, 32, 33, 34)
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8. A magnetic element comprising:
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a pinned layer, the pinned layer being ferromagnetic and having a first magnetization; a current confined layer having at least one channel in an insulating matrix, the at least one channel being conductive and extending through the current confined layer; and a free layer, the free layer being ferromagnetic and having a second magnetization, the current confined layer residing between the pinned layer and the free layer; wherein the pinned layer, the free layer, and the current confined layer are configured to allow the second magnetization of the free layer to be switched using spin transfer; a first conductive layer disposed between the free layer and the current confined layer; and a second conductive layer disposed between the pinned layer and the current confined layer.
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9. A magnetic element comprising:
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a first pinned layer, the first pinned layer being ferromagnetic and having a first magnetization; a current confined layer having at least one channel in an insulating matrix, the at least one channel being conductive and extending through the current confined layer; and a first free layer, the first free layer being ferromagnetic and having a second magnetization, the current confined layer residing between the first pinned layer and the first free layer; and a spin tunneling junction having a second free layer, a second pinned layer and a barrier layer residing between the second free layer and the second pinned layer, the barrier layer being insulating and having a thickness that allows tunneling of current carriers between the second free layer and the second pinned layer, the second free layer and the first free layer being magnetostatically coupled; wherein the first pinned layer, the first free layer, and the current confined layer are configured to allow the second magnetization of the first free layer to be switched using spin transfer. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A magnetic element comprising:
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a first pinned layer, the first pinned layer being ferromagnetic and having a first magnetization; a current confined layer having at least one channel in an insulating matrix, the at least one channel being conductive and extending through the current confined layer; and a first free layer, the first free layer being ferromagnetic and having a second magnetization, the current confined layer residing between the first pinned layer and the free layer; and a spin valve having a second free layer, a second pinned layer and a nonmagnetic spacer layer residing between the second free layer and the second pinned layer; wherein the first pinned layer, the first free layer, and the current confined layer are configured to allow the second magnetization of the first free layer to be switched using spin transfer. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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24. A magnetic element comprising:
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a first pinned layer, the first pinned layer being ferromagnetic and having a first magnetization; a current confined layer having at least one channel in an insulating matrix, the at least one channel being conductive and extending through the current confined layer; and a first free layer, the first free layer being ferromagnetic and having a second magnetization, the current confined layer residing between the first pinned layer and the first free layer; and a dual spin valve/tunnel structure having a second pinned layer, a nonmagnetic spacer layer, a second free layer, a third pinned layer and a barrier layer residing between the second free layer and the third pinned layer, the barrier layer being insulating and having a thickness that allows tunneling of current carriers between the second free layer and the second pinned layer, the nonmagnetic spacer residing between the second pinned layer and the second free layer, the second free layer and the first free layer being magnetostatically coupled; wherein the first pinned layer, the first free layer, and the current confined layer are configured to allow the second magnetization of the free layer to be switched using spin transfer. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification