Control of fluid flow in the processing of an object with a fluid

• US 7,163,380 B2
• Filed: 07/29/2003
• Issued: 01/16/2007
• Est. Priority Date: 07/29/2003
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Jones, William Dale
• Primary Examiner(s): Rodriguez; William H.
• Application Number:
  US10/630,649
• Publication Number:
  US 20050025628A1
• Time in Patent Office: 1,267 Days
• Field of Search: 417/44.1, 417/44.11, 417/53
• US Class Current: 417/44.1
• CPC Class Codes: F04B 49/065 and making use of computers

Abstract

An apparatus for and methods of control of a fluid flow. In a system for supercritical processing of an object, the apparatus includes a measuring device for measuring a pump performance parameter and a controller for adjusting a fluid flow in response to the performance parameter. The system further includes a processing chamber for performing a supercritical process and a device for circulating at least one of a gaseous, liquid, supercritical and near-supercritical fluid within the processing chamber. A method of control of a fluid flow includes the steps of: measuring a pump performance parameter; comparing a measured pump performance parameter to a predetermined target pump performance parameter; and adjusting a fluid flow in response to a difference in the measured pump performance parameter and the predetermined target pump performance parameter.

Claims

1. A system for supercritical processing of an object, the system comprising:

a. means for performing a supercritical process;

b. means for measuring a pump performance parameter; and

c. means for adjusting operation of a pump to control a fluid flow in response to the pump performance parameter,

wherein the means for performing a supercritical process comprises

a processing chamber and

means for circulating at least one of a gaseous, liquid, supercritical and near-supercritical fluid within the processing chamber.

2. The system of claim 1 wherein the object is a semiconductor wafer for forming integrated circuits.

3. The system of claim 1 wherein the means for circulating is a means for circulating a fluid comprising carbon dioxide.

4. The system of claim 3 wherein at least one of solvents, co-solvents and surfactants are contained in the carbon dioxide.

5. The system of claim 1 wherein the pump performance parameter comprises at least one of a pump speed, voltage, electric current, and electric power.

6. The system of claim 1 further comprising means for delivering the fluid flow to the means for performing a supercritical process.