Heat treatment jig for semiconductor silicon substrate

• US 7,163,393 B2
• Filed: 02/02/2004
• Issued: 01/16/2007
• Est. Priority Date: 02/02/2004
• Status: Expired due to Term

• Current Assignee: Sumitomo Mitsubishi Silicon Corporation (Sumco Corporation)
• Original Assignee: Sumitomo Mitsubishi Silicon Corporation (Sumco Corporation)
• Inventors: Adachi, Naoshi
• Primary Examiner(s): Wilson; Gregory
• Application Number:
  US10/771,225
• Publication Number:
  US 20050170307A1
• Time in Patent Office: 1,079 Days
• Field of Search: 432/253, 432/258, 432/5, 432/249, 432/259, 432/239, 211/41.18
• US Class Current: 432/253
• CPC Class Codes: F27D 5/0037 Supports specially adapted for semi-conductors
• CPC Class Codes: H01L 21/67748 horizontal transfer of a single workpiece
• CPC Class Codes: H01L 21/6875 characterised by a plurality of individual support members, e.g. support posts or protrusions

Abstract

This invention provides a heat treatment jig for semiconductor silicon substrates, which, in respective heat treatment of hydrogen annealing or argon annealing, can handle enlargement of the diameter of wafers to be treated and can also prevent slipping and dislocations that occur as a result of the stress caused by the weight of the wafer itself or the deflection of the heat treatment jig itself.

Claims

1. A heat treatment jig for a semiconductor silicon substrate comprising:

a plate-like heat treatment jig that can carry a silicon substrate comprising;

a central projecting part, provided at the center of the jig, for supporting a central portion of a backside of the substrate; and

at least one circular-arc part for supporting the backside of the substrate;

wherein the circular-arc parts comprise;

at least one of a plurality of circular-arc parts disposed on the same circle; and

a plurality of circular-arc parts that are disposed on concentric circles of different radii.

2. The heat treatment jig for a semiconductor silicon substrate according to claim 1, wherein one of a dimension of spaces between the plurality of circular-arc parts disposed on the same circle, and a dimension of cut-out portions in a single circular-arc part, is greater than a width of transfer tweezers for transferring the silicon substrate to the heat treatment jig.

3. The heat treatment jig for a semiconductor silicon substrate according to claim 2, wherein height dimensions of the central projecting part and height dimension of the circular-arc parts on the heat treatment jig are greater than the thickness of the transfer tweezers so that the transfer tweezers can enter the space between the jig and the silicon substrate placed on the jig.

4. The heat treatment jig for a semiconductor silicon substrate according to claim 2, further comprising a step-like groove part provided in the plate-like heat treatment jig in the radial direction from a vicinity of the central projecting part, so that the transfer tweezers can enter the space between the jig and the silicon substrate placed on the jig.

5. A heat treatment jig for a semiconductor silicon substrate comprising:

a plate-like heat treatment jig that can carry a silicon substrate comprising;

a central projecting part for supporting a central portion of a backside of the substrate; and

at least one circular-arc part for supporting the backside of the substrate,

wherein capping members are disposed on at least one of the contact surfaces of the central projecting part and circular-arc parts that contact the silicon substrate.

6. The heat treatment jig for a semiconductor silicon substrate according to claim 5, wherein the material of the capping members is one of silicon, quartz, a ceramic, silicon carbide and glassy carbon, and a thickness of the capping members is 0.1 mm or greater.

7. A heat treatment jig for a semiconductor silicon substrate, comprising:

a plate-like heat treatment jig that can carry a silicon substrate comprising;

a central projecting part for supporting a central portion of a backside of the substrate; and

at least one circular-arc part for supporting the backside of the substrate,

wherein at least a single layer of a coating film is disposed on at least one of the contact surfaces of the central projecting part and circular-arc parts that contact the silicon substrate.

8. The heat treatment jig for a semiconductor silicon substrate according to claim 7, wherein a material of the coating film is one of silicon, silicon oxide film and silicon nitride film, and a thickness of the coating film is 0.1 μ

m to 50 μ

m.