Processing a workpiece using water, a base, and ozone
DCFirst Claim
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1. A method for cleaning at least one workpiece, comprising:
- placing the workpiece into a chamber;
spraying a liquid onto the workpiece, with the liquid including water and ammonium hydroxide, and with the liquid forming a liquid layer on the workpiece;
controlling the thickness of the liquid layer by one or more of rotating the workpiece, adding a surfactant, or controlling the flow rate of the liquid; and
providing ozone in the chamber, with at least some of the ozone diffusing through the liquid layer and chemically reacting with a contaminant on the workpiece, to clean the workpiece.
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Abstract
Contaminants such as photoresist are quickly removed from a wafer having metal features, using water, ozone and a base such as ammonium hydroxide. Processing is performed at room temperature to avoid metal corrosion. Ozone is delivered into a stream of process liquid or into the process environment or chamber. Steam may alternatively be used. A layer of liquid or vapor forms on the wafer surface. The ozone moves through the liquid layer via diffusion, entrainment, jetting/spraying or bulk transfer, and chemically reacts with the photoresist, to remove it.
111 Citations
19 Claims
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1. A method for cleaning at least one workpiece, comprising:
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placing the workpiece into a chamber; spraying a liquid onto the workpiece, with the liquid including water and ammonium hydroxide, and with the liquid forming a liquid layer on the workpiece; controlling the thickness of the liquid layer by one or more of rotating the workpiece, adding a surfactant, or controlling the flow rate of the liquid; and providing ozone in the chamber, with at least some of the ozone diffusing through the liquid layer and chemically reacting with a contaminant on the workpiece, to clean the workpiece. - View Dependent Claims (2, 3, 4, 5)
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6. A method for removing photoresist from a surface of a workpiece, comprising:
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placing the workpiece into a chamber; closing the chamber, and providing ozone gas into the chamber; spraying a liquid at a controlled rate onto a surface of the workpiece having a coating of photoresist, with the liquid including water and a base; forming the liquid into a layer on the workpiece; controlling the thickness of the liquid layer; and providing ozone to the liquid layer, with the ozone oxidizing the photoresist in the presence of the liquid, and removing the photoresist. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13)
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14. A method for reducing corrosion of metal features on a wafer during cleaning of the wafer, comprising:
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placing the workpiece into a chamber; spinning the wafer; contacting the spinning wafer with a liquid including water and ammonium hydroxide, with the liquid forming into a liquid layer on the wafer; controlling the thickness of the liquid layer; providing ozone into the liquid layer, with the ozone oxidizing a contaminant on the wafer; and with the ammonium hydroxide acting to reduce corrosion of the metal features, in the presence of water and ozone. - View Dependent Claims (15, 16, 17, 18, 19)
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Specification