Thin-film thermoelectric cooling and heating devices for DNA genomic and proteomic chips, thermo-optical switching circuits, and IR tags

• US 7,164,077 B2
• Filed: 04/09/2002
• Issued: 01/16/2007
• Est. Priority Date: 04/09/2001
• Status: Active Grant

• Current Assignee: Laird Thermal Systems, Inc
• Original Assignee: Research Triangle Institute
• Inventors: Venkatasubramanian, Rama
• Primary Examiner(s): Nguyen; Nam
• Assistant Examiner(s): FICK, ANTHONY D
• Application Number:
  US10/118,236
• Publication Number:
  US 20020174660A1
• Time in Patent Office: 1,743 Days
• Field of Search: 136/203, 136/204, 257/108, 435/6
• US Class Current: 136/203
• CPC Class Codes: B01L 2400/0448 Marangoni flow; Thermocapillary effect
• CPC Class Codes: B01L 3/5085 for multiple samples, e.g. microtitration plates
• CPC Class Codes: B01L 7/52 with provision for submitting samples to a predetermined sequence of different temperatures, e.g. for treating nucleic acid samples amplification or hybridisation processes per se C12Q1/68; controlling sequential reactions for synthesis B01J19/0046
• CPC Class Codes: B01L 7/54 using spatial temperature gradients
• CPC Class Codes: F25B 21/04 reversible
• CPC Class Codes: H01L 2224/95145 Electrostatic alignment, i.e. polarity alignment with Coulomb charges
• CPC Class Codes: H01L 2224/95147 by molecular lock-key, e.g. by DNA
• CPC Class Codes: H01L 23/38 Cooling arrangements using the Peltier effect
• CPC Class Codes: H01L 27/14649 Infrared imagers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01068 Erbium [Er]
• CPC Class Codes: H01L 2924/01077 Iridium [Ir]
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H05B 3/10 Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
• CPC Class Codes: H10N 10/817 the junction being non-separable, e.g. being cemented, sintered or soldered

Abstract

A thermoelectric cooling and heating device including a substrate, a plurality of thermoelectric elements arranged on one side of the substrate and configured to perform at least one of selective heating and cooling such that each thermoelectric element includes a thermoelectric material, a Peltier contact contacting the thermoelectric material and forming under electrical current flow at least one of a heated junction and a cooled junction, and electrodes configured to provide current through the thermoelectric material and the Peltier contact. As such, the thermoelectric cooling and heating device selectively biases the thermoelectric elements to provide on one side of the thermolectric device a grid of localized heated or cooled junctions.

Claims

1. A thermoelectric cooling and heating device comprising:

a substrate;

a plurality of thermoelectric elements arranged on one side of the substrate and configured to perform at least one of selective heating and cooling, each thermoelectric element including, a thermoelectric material, a Peltier contact contacting the thermoelectric material and configured to form under electrical current flow at least one of a heated junction and a cooled junction, and electrodes configured to provide current through the thermoelectric material and the Peltier contact; and

a controller configured to separately control at least a first electrode of a first thermoelectric element and a second electrode of a second thermoelectric element, the controller being further configured to bias the first and second electrodes to provide simultaneous heating of a first portion of the substrate adjacent the first thermoelectric element and cooling of a second portion of the substrate adjacent the second thermoelectric element.

2. The device of claim 1, wherein the thermoelectric material comprises:

an n-type thermoelectric material; and

a p-type thermoelectric material with the Peltier contact abridging the n-type and p-type thermoelectric materials such that the electrodes contact a side of the n-type thermoelectric material opposite the Peltier contact and a side of the p-type thermoelectric material opposite the Peltier contact.

3. The device of claim 2 wherein the controller is configured to selectively bias the electrodes of each of the thermoelectric elements.

4. The device of claim 3, further comprising:

a surface header contacting said plurality of thermoelectric elements and having a transverse thermal conductivity across a thickness of said surface header which is higher than a lateral thermal conductivity along a plane of the surface header.

5. The device of claim 4, wherein the surface header comprises a high thermal conductivity material in a low thermal conductivity matrix and is patterned on an array grid such that the high thermal conductivity material of the surface header aligns with the thermoelectric elements.

6. The device of claim 2, wherein both the n-type thermoelectric material and the p-type thermoelectric material comprise thin-film thermoelectric layers less than 10 μ

m (micrometer) thick.

7. The device of claim 2, wherein both the n-type thermoelectric material and the p-type thermoelectric material comprise high ZT thermoelectric materials.

8. The device of claim 7, wherein the ZT thermoelectric materials comprise superlattice structured thin-film materials.

9. The device of claim 8, wherein the superlattice structured thin-film materials comprise high-ZT materials including at least one of Bi₂Te₃-based superlattice materials, Si/Ge superlattice materials, and PbTe-based superlattice materials.

10. The device of claim 1, wherein the thermoelectric elements comprise microelectronically patterned thin-film thermoelectric elements.

11. The device of claim 1, further comprising:

a receptacle thermally contacting the thermoelectric elements and including an array of patches configured to receive a biological material.

12. The device of claim 11, wherein the patches of the receptacle are aligned with the thermoelectric elements.

13. The device of claim 12, wherein the patches are patterned lithographically to have dimensions ranging from 1 to 500 m.

14. The device of claim 11, wherein the biological material includes DNA material for genomics analysis.

15. The device of claim 11, wherein the biological material includes proteins for proteomics analysis.

16. The device of claim 11, wherein the thermoelectric elements are configured to at least one of heat and cool the biological material.

17. The device of claim 16, wherein the patches are configured to receive as the biological material single stranded DNA and the thermoelements are configured to control the temperature of the single stranded DNA for polymorphism conformation.

18. The device of claim 16, wherein the thermoelectric elements are configured to at least one of heat and cool DNA double-helix material to form single-stranded DNA material.

19. The device of claim 16, wherein the thermoelectric elements are configured to provide localized thermo-genetic switches to switch at least one of DNA chemistry, DNA-RNA chemistry, protein synthesis, cross conversion dominant genes to recessive genes, and production of antibodies.

20. The device of claim 16, wherein the patches are configured to receive as the DNA material single stranded DNA and the thermoelements are configured to control the temperature of the single stranded DNA for polymorphism conformation.

21. The device of claim 16, wherein the thermoelectric elements are configured to have a thermal response time less than 1.0 ms.

22. The device of claim 21, wherein the thermoelectric elements are configured to heat shock biological material including at least one of DNA material, proteins, and protein-related DNA.

23. The device of claim 11, wherein the controller is configured to provide an offset voltage to selected thermoelectric elements in order to spot-charge the selected thermoelectric elements.

24. The device of claim 23, wherein the thermoelectric elements are configured to at least one of heat and cool the biological material.

25. The device of claim 24, wherein the thermoelectric elements are configured to have a thermal response time less than 1.0 ms.

26. The device of claim 25, wherein the thermoelectric elements are configured to heat shock biological material including at least one of DNA material, proteins, and protein-related DNA.

27. The device of claim 24, wherein the thermoelectric elements are configured to provide localized thermo-genetic switches to switch at least one of DNA chemistry, DNA-RNA chemistry, protein synthesis, cross conversion dominant genes to recessive genes, and production of antibodies.

28. The device of claim 24, wherein the patches are configured to receive as the DNA material single stranded DNA and the thermoelements are configured to control the temperature of the single stranded DNA for polymorphism conformation.

29. The device of claim 1, further comprising:

a microsurgical tool thermally contacting the thermoelectric elements and configured to control the temperature of bio-tissues in contact with the microsurgical tool.

30. The device of claim 1, further comprising:

a thermo-optic phase shifter in thermal contact with the plurality of thermoelectric elements and configured to vary an index of refraction of an optical medium via temperature variations.

31. The device of claim 30, wherein the thermoelectric elements are configured to heat the thermo-optic phase shifter.

32. The device of claim 30, wherein the thermoelectric elements are configured to cool the thermo-optic phase shifter.

33. The device of claim 30, wherein the thermoelectric elements are configured to cycle a temperature of the thermo-optic phase shifter.

34. The device of claim 33, wherein the thermoelectric elements are configured to have a thermal response time less than 1.0 ms.

35. The device of claim 30, wherein the thermo-optic phase shifter includes fluorinated polymers with larger thermo-optic coefficients than silica glasses.

36. The device of claim 1, further comprising:

at least one laser thermally coupled to the plurality of thermoelectric elements and having a semiconductor material defining a band gap varied by temperature variations of the thermoelectric elements so as to control a lasing frequency of the at least one laser.

37. The device of claim 36, wherein the thermoelectric elements are configured to heat the at least one laser.

38. The device of claim 36, wherein the thermoelectric elements are configured to cool the at least one laser.

39. The device of claim 36, wherein the thermoelectric elements are configured to cycle a temperature of the at least one laser.

40. The device of claim 39, wherein the thermoelectric elements are configured to have a thermal response time less than 1.0 ms.

41. The device of claim 36, wherein the laser is a vertical cavity surface-emitting laser.

42. The device of claim 36, wherein the laser is a distributed feedback laser.

43. The device of claim 1, further comprising:

an integrated module including at least one electronic component in thermal contact with the plurality of thermoelectric elements and configured to control a temperature of the at least one electronic component of the integrated module.

44. The device of claim 43, wherein the thermoelectric elements are configured to selectively heat the at least one electronic component.

45. The device of claim 43, wherein the thermoelectric elements are configured to selectively cool the at least one electronic component.

46. The device of claim 43, wherein the thermoelectric elements are configured to selectively maintain a temperature of the at least one electronic component.

47. The device of claim 43, wherein the integrated module comprises an electronics module.

48. The device of claim 47, wherein the at least one electronic component includes at least one of a diode, a capacitor, a inductor, a filter network, a memory chip, and a CPU chip.

49. The device of claim 43, wherein the integrated module comprises an optoelectronics module.

50. The device of claim 49, wherein the optoelectronics module includes at least one of a bias circuit, a laser driver, a monitor diode, a VCSEL array, an out-going optical connector, an in-coming optical connector, a photodetector, a pre-amplification circuit, and a post-amplification circuit.

51. The device of claim 43, wherein the integrated module comprises an infrared imaging array.

52. The device of claim 1, further comprising:

a switching optical network including optical switches in thermal contact with the plurality of thermoelectric elements and configured to control a temperature of the optical switches in the switching optical network.

53. The device of claim 52, wherein the optical switches comprise electroholographic optical switches.

54. The device of claim 52, wherein the electroholographic optical switches comprise potassium lithium tantalate niobate crystals.

55. The device of claim 52, wherein the optical switches comprise thermocapillary switches.

56. The device of claim 55, wherein the optical switches comprise bubblejet switches.

57. The device of claim 1, further comprising:

a cellular communications network including micro-strip delay lines in thermal contact with the plurality of thermoelectric elements and configured to control a temperature of the micro-strip delay lines in the cellular communications network.

58. The device of claim 1 wherein the plurality of thermoelectric elements are configured to provide cooling and/or heating response times on the order of tens of μ

s (microseconds) or less.

59. The device of claim 1 wherein the plurality of thermoelectric elements are configured to provide cooling and/or heating at flux levels in a range of 0.1 W/cm² to about 2000 W/cm².

60. A thermoelectric cooling and heating device comprising:

a substrate;

a plurality of thermoelectric elements arranged on one side of the substrate and configured to perform at least one of selective heating and cooling, each thermoelectric element including, a thermoelectric material, a Peltier contact contacting the thermoelectric material and configured to form under electrical current flow at least one of a heated junction and a cooled junction, and electrodes configured to provide current through the thermoelectric material and the Peltier contact; and

a surface header contacting said plurality of thermoelectric elements and having a transverse thermal conductivity across a thickness of said surface header which is higher than a lateral thermal conductivity along a plane of the surface header, wherein the surface header comprises a high thermal conductivity material in a low thermal conductivity matrix of a solid material and is patterned on an array grid such that the high thermal conductivity material of the surface header aligns with the thermoelectric elements.

61. The device of claim 60, wherein the thermoelectric material comprises:

an n-type thermoelectric material; and

a p-type thermoelectric material with the Peltier contact abridging the n-type and p-type thermoelectric materials such that the electrodes contact a side of the n-type thermoelectric material opposite the Peltier contact and a side of the p-type thermoelectric material opposite the Peltier contact.

62. The device of claim 61, further comprising:

a controller configured to selectively bias the electrodes of each of the thermoelectric elements in at least one of a first direction to form said cooled junction and a second direction to form said heated junction.

63. The device of claim 61, wherein both the n-type thermoelectric material and the p-type thermoelectric material comprise thin-film thermoelectric layers less than 10 μ

m (micrometer) thick.

64. The device of claim 61, wherein both the n-type thermoelectric material and the p-type thermoelectric material comprise high ZT thermoelectric materials.

65. The device of claim 64, wherein the ZT thermoelectric materials comprise superlattice structured thin-film materials.

66. The device of claim 65, wherein the superlattice structured thin-film materials comprise high-ZT materials including at least one of Bi₂Te₃-based superlattice materials, Si/Ge superlattice materials, and PbTe-based superlattice materials.

67. The device of claim 60, wherein the thermoelectric elements comprise microelectronically patterned thin-film thermoelectric elements.

68. The device according to claim 60 further comprising:

a controller configured to separately control at least a first electrode of a first thermoelectric element and a second electrode of a second thermoelectric element, the controller being further configured to bias the first and second electrodes to provide simultaneous heating of a first portion of the substrate adjacent the first thermoelectric element and cooling of a second portion of the substrate adjacent the second thermoelectric element.

69. The device of claim 60, further comprising:

a receptacle thermally contacting the thermoelectric elements and including an array of patches configured to receive a biological material.

70. The device of claim 60, further comprising:

a microsurgical tool thermally contacting the thermoelectric elements and configured to control the temperature of bio-tissues in contact with the microsurgical tool.

71. The device of claim 60, further comprising:

a thermo-optic phase shifter in thermal contact with the plurality of thermoelectric elements and configured to vary an index of refraction of an optical medium via temperature variations.

72. The device of claim 60, further comprising:

at least one laser thermally coupled to the plurality of thermoelectric elements and having a semiconductor material defining a band gap varied by temperature variations of the thermoelectric elements so as to control a lasing frequency of the at least one laser.

73. The device of claim 60, further comprising:

an integrated module including at least one electronic component in thermal contact with the plurality of thermoelectric elements and configured to control a temperature of the at least one electronic component of the integrated module.

74. The device of claim 60, further comprising:

a switching optical network including optical switches in thermal contact with the plurality of thermoelectric elements and configured to control a temperature of the optical switches in the switching optical network.

75. The device of claim 60, further comprising:

a cellular communications network including micro-strip delay lines in thermal contact with the plurality of thermoelectric elements and configured to control a temperature of the micro-strip delay lines in the cellular communications network.

76. The device of claim 60 wherein the plurality of thermoelectric elements are configured to provide cooling and/or heating response times on the order of tens of μ

s (microseconds) or less.

77. The device of claim 60 wherein the plurality of thermoelectric elements are configured to provide cooling and/or heating at flux levels in a range of 0.1 W/cm² to about 2000 W/cm².