Method and apparatus for improved plasma processing uniformity
First Claim
1. A method of determining a set of optimum plasma process parameters A*={n*, τ
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i*, Φ
i*, Pi*, S*;
Li*} for plasma processing, with a high degree of uniformity, a workpiece in a plasma reactor chamber having an electrode with an upper surface as part of a plasma reactor system, wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τ
i is the on-time of the RF power for the ith RF feed line, Φ
i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode to location Li through the ith RF feed line, and S is the sequencing of RF power to the electrode through the RF feed lines, the method comprising the steps of;
a) setting initial values for process parameters n, τ
i, Φ
i, Pi, and S; and
b) processing one or more workpieces while varying one or more of said process parameters to determine the optimized set of process parameters A*={n*, τ
i*, Φ
i*, Pi*, S*} that achieve a process non-uniformity less than a predetermined standard, including use of at least one of a linear or a non-linear processing model as a basis for varying at least one of the process parameters.
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Accused Products
Abstract
A method and apparatus for generating and controlling a plasma (130) formed in a capacitively coupled plasma system (100) having a plasma electrode (140) and a bias electrode in the form of a workpiece support member (170), wherein the plasma electrode is unitary and has multiple regions (Ri) defined by a plurality of RF power feed lines (156) and the RF power delivered thereto. The electrode regions may also be defined as electrode segments (420) separated by insulators (426). A set of process parameters A={n, τi, Φi, Pi, S; Li} is defined; wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τi is the on-time of the RF power for the ith RF feed line, Φi is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode through the ith RF feed line at location Li, and S is the sequencing of RF power to the electrode through the RF feed lines. One or more of these parameters are adjusted so that operation of the plasma system results in a workpiece (176) being processed with a desired amount or degree of process uniformity.
82 Citations
15 Claims
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1. A method of determining a set of optimum plasma process parameters A*={n*, τ
-
i*, Φ
i*, Pi*, S*;
Li*} for plasma processing, with a high degree of uniformity, a workpiece in a plasma reactor chamber having an electrode with an upper surface as part of a plasma reactor system, wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τ
i is the on-time of the RF power for the ith RF feed line, Φ
i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode to location Li through the ith RF feed line, and S is the sequencing of RF power to the electrode through the RF feed lines, the method comprising the steps of;a) setting initial values for process parameters n, τ
i, Φ
i, Pi, and S; andb) processing one or more workpieces while varying one or more of said process parameters to determine the optimized set of process parameters A*={n*, τ
i*, Φ
i*, Pi*, S*} that achieve a process non-uniformity less than a predetermined standard, including use of at least one of a linear or a non-linear processing model as a basis for varying at least one of the process parameters. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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i*, Φ
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12. A method of determining a set of optimum plasma process parameters A*={n*, τ
-
i*, Φ
i*, Pi*, S*;
Li*} for plasma processing, with a desired degree of uniformity, a workpiece in a plasma reactor chamber having an electrode with an upper surface as part of a plasma reactor system, wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τ
i is the on-time of the RF power for the ith RF feed line, Φ
i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode to location Li through the ith RF feed line, and S is the sequencing of RF power to the electrode through the RF feed lines, the method comprising the steps of;a) setting initial values for process parameters n, τ
i, Φ
i, Pi, and S; andb) processing one or more workpieces while varying one or more of said process parameters to determine the optimized set of process parameters A*={n*, τ
i*, Φ
i*, Pi*, S*} that achieve a desired process uniformity, including use of at least one of a linear or a non-linear processing model as a basis for varying at least one of the process parameters. - View Dependent Claims (13, 14, 15)
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i*, Φ
Specification