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Method and apparatus for improved plasma processing uniformity

  • US 7,164,236 B2
  • Filed: 03/05/2004
  • Issued: 01/16/2007
  • Est. Priority Date: 08/08/2000
  • Status: Expired due to Term
First Claim
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1. A method of determining a set of optimum plasma process parameters A*={n*, τ

  • i*, Φ

    i*, Pi*, S*;

    Li*} for plasma processing, with a high degree of uniformity, a workpiece in a plasma reactor chamber having an electrode with an upper surface as part of a plasma reactor system, wherein n is the number of RF feed lines connected to the electrode upper surface at locations Li, τ

    i is the on-time of the RF power for the ith RF feed line, Φ

    i is the phase of the ith RF feed line relative to a select one of the other RF feed lines, Pi is the RF power delivered to the electrode to location Li through the ith RF feed line, and S is the sequencing of RF power to the electrode through the RF feed lines, the method comprising the steps of;

    a) setting initial values for process parameters n, τ

    i, Φ

    i, Pi, and S; and

    b) processing one or more workpieces while varying one or more of said process parameters to determine the optimized set of process parameters A*={n*, τ

    i*, Φ

    i*, Pi*, S*} that achieve a process non-uniformity less than a predetermined standard, including use of at least one of a linear or a non-linear processing model as a basis for varying at least one of the process parameters.

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