Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process

• US 7,166,520 B1
• Filed: 08/08/2005
• Issued: 01/23/2007
• Est. Priority Date: 08/08/2005
• Status: Active Grant

• Current Assignee: Silicon Genesis
• Original Assignee: Silicon Genesis
• Inventors: Henley, Francois J.
• Primary Examiner(s): HOANG, QUOC DINH
• Application Number:
  US11/199,870
• Time in Patent Office: 533 Days
• Field of Search: 438/455, 438/458
• US Class Current: 438/458
• CPC Class Codes: H01L 21/2007 Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer H01L21/2011 takes precedence; bonding of semiconductor wafers to semiconductor wafers for junction formation H01L21/187
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2924/19041 being a capacitor

Abstract

A method for fabricating one or more devices, e.g., integrated circuits. The method includes providing a substrate (e.g., silicon), which has a thickness of semiconductor material and a surface region. The substrate also has a cleave plane provided within the substrate to define the thickness of semiconductor material. The method includes joining the surface region of the substrate to a first handle substrate. In a preferred embodiment, the first handle substrate is termed a “thin” substrate, which provides suitable bonding characteristics, can withstand high temperature processing often desired during the manufacture of semiconductor devices, and has desirable de-bonding characteristics between it and a second handle substrate, which will be described in more detail below. In a preferred embodiment, the first handle substrate is also thick enough and rigid enough to allow for cleaving according to a specific embodiment.

Claims

1. A method for fabricating one or more devices, the method comprising:

providing a substrate, the substrate having a thickness of semiconductor material and a surface region, the substrate also having a cleave plane provided within the substrate and defining the thickness of semiconductor material;

joining the surface region of the substrate to a first handle substrate;

initiating and propagating a controlled cleaving action at a portion of the cleave plane to detach the thickness of semiconductor material from the substrate, while the thickness of semiconductor material remains joined to the first handle substrate, to expose a second surface region of the thickness of semiconductor material;

joining a backside of the first handle substrate to a second handle substrate;

processing the second handle substrate with the thickness of semiconductor material using one or more processes to form at least one integrated circuit device onto a portion of the thickness of semiconductor material;

forming a planarized surface region overlying the thickness of semiconductor material;

joining the planarized surface region to a face of a third handle substrate; and

removing the second handle substrate from the first handle substrate including the thickness of semiconductor material, while the face of the third handle substrate remains joined to the planarized surface region.

2. The method of claim 1 wherein the first handle substrate is a silicon substrate.

3. The method of claim 1 wherein the first handle substrate is a silicon substrate having a thickness of 300 microns and less.

4. The method of claim 1 wherein the first handle substrate can be selectively removed from the second handle substrate.

5. The method of claim 1 wherein the second handle substrate firmly engages with the first handle substrate to withstand a temperature of about 400 degrees Celsius and greater.

6. The method of claim 1 wherein the joining of the between the first handle substrate and the second handle substrate has a bond strength ranging from about 100–

500 millijoules per square meter.

7. The method of claim 1 wherein the first handle substrate is detachable from the second handle substrate after processing the second handle substrate to form the integrated circuit device.

8. The method of claim 1 further comprising patterning the first handle substrate coupled to the third handle substrate to form one or more via structures, the one or more via structures having a width to depth ratio ranging from about 1/5 to about 1/30.

9. The method of claim 1 wherein the first substrate, second substrate, and thickness of material are characterized by a total thickness ranging at about 725 microns and a diameter of about 200 millimeters.

10. The method of claim 1 wherein the substrate is a silicon on insulator wafer.

11. The method of claim 1 wherein the substrate is a silicon wafer.

12. The method of claim 1 wherein the substrate comprises a silicon bearing material.

13. The method of claim 1 wherein the thickness of semiconductor material is single crystal silicon material.

14. The method of claim 1 wherein the thickness of semiconductor material comprises a silicon bearing material characterized by a strained portion within a region of the silicon bearing material.

15. The method of claim 1 wherein the substrate comprises a multilayered structure, the multilayered structure having an overlying insulating material and/or an amorphous silicon material.

16. The method of claim 1 wherein the cleave plane comprises a plurality of particles.

17. The method of claim 1 wherein the cleave plane comprises a plurality of hydrogen bearing particles.

18. The method of claim 1 wherein the cleave plane comprises a strained region.

19. The method of claim 1 wherein the cleave plane comprises a deposited material.

20. The method of claim 1 wherein the cleave plane comprises a weakened region.

21. The method of claim 1 wherein the controlled cleaving action forms a single propagating cleave front on the portion of the cleave plane.

22. The method of claim 1 wherein the controlled cleaving action forms more than one propagating cleave fronts on the portion of the cleave plane.

23. The method of claim 1 wherein the joining of the surface region of the substrate to the first handle substrate is provided by a bonding process.

24. The method of claim 1 wherein the joining comprises a plasma activation bonding process.

25. The method of claim 1 wherein the joining comprises a bonding process selected from a glue process, an electro static process, a non-organic glue process, an anodic process, a plasma activation process, or a wet activation process.

26. The method of claim 1 wherein the first handle substrate has a thickness ranging from about 5 microns to about 10 microns.

27. The method of claim 1 wherein the second handle substrate is selected from a silicon substrate, a polysilicon substrate and a quartz substrate.

28. The method of claim 1 wherein the one integrated circuit device comprises a MOSFET.

29. The method of claim 1 wherein the one integrated circuit device comprises a CMOS device.

30. The method of claim 1 wherein the one integrated circuit device is selected from an active device, a capacitor, a resistor and an inductor.

31. The method of claim 1 wherein the third handle substrate is selected from a semiconductor substrate, a silicon substrate, and a multi-layer stack of integrated devices.

32. The method of claim 1 wherein the planarized surface region comprises an oxide bearing material.

33. The method of claim 1 wherein the planarized surface region is selected from oxide, nitride, spin-on-glass, and metal.

34. The method of claim 1 wherein the removing comprises using a mechanical separation process to remove the second handle substrate from the first handle substrate.

35. The method of claim 1 wherein the first handle substrate is selected from a silicon substrate, a polysilicon substrate and a quartz substrate.