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Method for ion implanting insulator material to reduce dielectric constant

  • US 7,166,524 B2
  • Filed: 12/01/2004
  • Issued: 01/23/2007
  • Est. Priority Date: 08/11/2000
  • Status: Expired due to Fees
First Claim
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1. A method of forming a low dielectric constant insulating film on a workpiece, comprising:

  • forming a dielectric layer on said workpiece; and

    ion implanting a gaseous species into said dielectric layer so as to form gas bubbles in said dielectric layer;

    regulating the average diameter of said gas bubbles by regulating the energy of the ions of said gaseous species during the step of ion implanting.

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