Light emitting devices with improved extraction efficiency
First Claim
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1. A light-emitting device, comprising:
- a multi-layer stack of materials including a layer of n-doped material, a layer of p-doped material, and a light-generating region; and
a layer of reflective material that is capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material,wherein;
a surface of the layer of n-doped material is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the layer of n-doped material;
the surface of the layer of n-doped material has a dielectric function that varies spatially according to a pattern,the pattern is configured so that light emitted by the surface of the layer of n-doped material has a spectrum of radiation modes, and the spectrum of radiation modes is substantially the same as a characteristic emission spectrum of the light-generating region;
a distance between the layer of p-doped material and the layer of reflective material is less than a distance between the layer of n-doped material and the layer of reflective material; and
the layer of n-doped material is supported by the layer of p-doped material.
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Abstract
Light-emitting devices, and related components, systems and methods are disclosed.
174 Citations
32 Claims
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1. A light-emitting device, comprising:
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a multi-layer stack of materials including a layer of n-doped material, a layer of p-doped material, and a light-generating region; and a layer of reflective material that is capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material, wherein; a surface of the layer of n-doped material is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the layer of n-doped material; the surface of the layer of n-doped material has a dielectric function that varies spatially according to a pattern, the pattern is configured so that light emitted by the surface of the layer of n-doped material has a spectrum of radiation modes, and the spectrum of radiation modes is substantially the same as a characteristic emission spectrum of the light-generating region; a distance between the layer of p-doped material and the layer of reflective material is less than a distance between the layer of n-doped material and the layer of reflective material; and the layer of n-doped material is supported by the layer of p-doped material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A light-emitting device, comprising:
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a multi-layer stack of materials including a layer of n-doped material, a layer of p-doped material, and a light-generating region; and a layer of reflective material that is capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material, wherein; a surface of the layer of n-doped material is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the layer of n-doped material, the surface of the layer of n-doped material has a dielectric function that varies spatially according to a pattern, the pattern is a nonperiodic pattern, a distance between the layer of p-doped material and the layer of reflective material is less than a distance between the layer of n-doped material and the layer of reflective material; and the layer of n-doped material is supported by the layer of p-doped material. - View Dependent Claims (29)
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30. A light-emitting device, comprising:
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a multi-layer stack of materials including a layer of n-doped material, a layer of p-doped material, and a light-generating region; and a layer of reflective material that is capable of reflecting at least about 50% of light generated by the light-generating region that impinges on the layer of reflective material, wherein; a surface of the layer of n-doped material is configured so that light generated by the light-generating region can emerge from the light-emitting device via the surface of the layer of n-doped material; a distance between the layer of p-doped material and the layer of reflective material is less than a distance between the layer of n-doped material and the layer of reflective material; the layer of n-doped material is supported by the layer of p-doped material; and the surface of the layer of n-doped material has a surface smoothness of less than about 5 nm root mean square (rms). - View Dependent Claims (31, 32)
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Specification