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Photogate for use in an imaging device

  • US 7,166,879 B2
  • Filed: 04/08/2002
  • Issued: 01/23/2007
  • Est. Priority Date: 06/18/1999
  • Status: Expired due to Term
First Claim
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1. A photogate for use in an imaging device, said photogate comprising:

  • a doped layer formed in a substrate;

    a doped region formed in said doped layer;

    a transparent gate comprising a doped silicon layer transparent to radiant energy having a thickness within the range of 50 to 1500 Angstroms;

    a conductive layer comprising indium tin oxide formed on said doped silicon layer; and

    a gate oxide layer formed between the doped region and the transparent gate, said transparent gate formed on at least a portion of the gate oxide layer.

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