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Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process

  • US 7,169,619 B2
  • Filed: 11/19/2002
  • Issued: 01/30/2007
  • Est. Priority Date: 11/19/2002
  • Status: Expired due to Fees
First Claim
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1. A process for forming an epitaxial ABO3 oxide layer overlying a monocrystalline substrate, the oxide layer comprising an alkaline earth metal A and a B metal, said process comprising:

  • providing a monocrystalline substrate;

    establishing a temperature of said monocrystalline substrate within a range of from about 250°

    C. to about 450°

    C.;

    exposing said monocrystalline substrate to a partial pressure of oxygen in the range of from about 1×

    10

    9
    to about 8×

    10

    8
    Torr; and

    exposing said monocrystalline substrate to at least one source of said alkaline earth metal A and to at least one source of said metal B such that a ratio of said alkaline earth metal A to said metal B is greater than one.

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