Method for fabricating semiconductor structures on vicinal substrates using a low temperature, low pressure, alkaline earth metal-rich process
First Claim
1. A process for forming an epitaxial ABO3 oxide layer overlying a monocrystalline substrate, the oxide layer comprising an alkaline earth metal A and a B metal, said process comprising:
- providing a monocrystalline substrate;
establishing a temperature of said monocrystalline substrate within a range of from about 250°
C. to about 450°
C.;
exposing said monocrystalline substrate to a partial pressure of oxygen in the range of from about 1×
10−
9 to about 8×
10−
8 Torr; and
exposing said monocrystalline substrate to at least one source of said alkaline earth metal A and to at least one source of said metal B such that a ratio of said alkaline earth metal A to said metal B is greater than one.
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Abstract
High quality epitaxial layers of monocrystalline oxide materials (24) can be grown overlying monocrystalline substrates (22) such as large silicon wafers. The monocrystalline oxide layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer serves as a decoupling layer between the substrate and the buffer layer so that the substrate and the buffer is crystal-graphically, chemically, and dielectrically decoupled. In addition, high quality epitaxial accommodating buffer layers may be formed overlying vicinal substrates using a low pressure, low temperature, alkaline-earth metal-rich process.
586 Citations
8 Claims
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1. A process for forming an epitaxial ABO3 oxide layer overlying a monocrystalline substrate, the oxide layer comprising an alkaline earth metal A and a B metal, said process comprising:
-
providing a monocrystalline substrate; establishing a temperature of said monocrystalline substrate within a range of from about 250°
C. to about 450°
C.;exposing said monocrystalline substrate to a partial pressure of oxygen in the range of from about 1×
10−
9 to about 8×
10−
8 Torr; andexposing said monocrystalline substrate to at least one source of said alkaline earth metal A and to at least one source of said metal B such that a ratio of said alkaline earth metal A to said metal B is greater than one. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification