Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device

• US 7,169,630 B2
• Filed: 09/29/2004
• Issued: 01/30/2007
• Est. Priority Date: 09/30/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Moriwaka, Tomoaki
• Primary Examiner(s): Dang; Phuc T.
• Application Number:
  US10/952,250
• Publication Number:
  US 20050079645A1
• Time in Patent Office: 853 Days
• Field of Search: 438/22, 438/27, 438/31, 438/34, 438/35, 438/61
• US Class Current: 438/22
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 27/0994 Fibers, light pipes optical fibers per se G02B6/02
• CPC Class Codes: H01L 21/02595 polycrystalline
• CPC Class Codes: H01L 21/02678 Beam shaping, e.g. using a mask
• CPC Class Codes: H01S 3/005 Optical devices external to the laser cavity, specially adapted for lasers, e.g. for homogenisation of the beam or for manipulating laser pulses, e.g. pulse shaping shaping laser beam for working metal or other materials B23K26/06; optical elements, systems or apparatus in general G02B

Abstract

The energy distribution of the beam spot on the irradiated surface changes due to the change in the oscillation condition of the laser or before and after the maintenance. The present invention provides an optical system for forming a rectangular beam spot on an irradiated surface including a beam homogenizer for homogenizing the energy distribution of the rectangular beam spot on the irradiated surface in a direction of its long or short side. The beam homogenizer includes an optical element having a pair of reflection planes provided oppositely for reflecting the laser beam in the direction where the energy distribution is homogenized and having a curved shape in its entrance surface. The entrance surface of the optical element means a surface of the optical element where the laser beam is incident first.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming a non-single crystal semiconductor film over a substrate, and

performing laser annealing in such a way that a laser beam which is emitted from a laser oscillator and which is shaped into a rectangular beam spot on the non-single crystal semiconductor film through an optical system including an optical element for homogenizing energy distribution of the laser beam in a direction of its long or short side is irradiated to the non-single crystal semiconductor film while moving a position of the beam spot,

wherein the optical element has a pair of reflection planes provided oppositely for reflecting the laser beam in the direction where the energy distribution is homogenized, and

wherein the optical element has a curved surface on its entrance of the laser beam.

3. A method for manufacturing a semiconductor device according to claim 1 or claim 2,

wherein the optical element is a light pipe.

4. A method for manufacturing a semiconductor device according to claim 1 or 2,

wherein the optical element is an optical waveguide.

5. A method for manufacturing a semiconductor device according to claim 1,

wherein the optical system includes one or a plurality of cylindrical lenses for projecting a plane having homogeneous energy distribution formed by the optical element to the non-single crystal semiconductor film.

6. A method for manufacturing a semiconductor device according to claim 1 or claim 2,

wherein the curved surface has curvature in a direction where the optical element acts.

7. A method for manufacturing a semiconductor device according to claim 1 or claim 2,

wherein the rectangular beam spot has an aspect ratio of 10 or more.

8. A method for manufacturing a semiconductor device according to claim 1 or claim 2,

wherein the rectangular beam spot has an aspect ratio of 100 or more.

9. A method for manufacturing a semiconductor device according to claim 1 or claim 2,

wherein the laser oscillator is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, a YVO₄ laser, a YLF laser, an Ar laser, and a GdVO₄ laser.

2. A method for manufacturing a semiconductor device comprising:

forming a non-single crystal semiconductor film over a substrate, and

performing laser annealing in such a way that a laser beam which is emitted from a laser oscillator and which is shaped into a rectangular beam spot on the non-single crystal semiconductor film through an optical system including an optical element for homogenizing energy distribution of the laser beam in a direction of its long or short side and one or a plurality of cylindrical lenses for projecting a plane having homogeneous energy distribution formed by the optical element to the non-single crystal semiconductor film is irradiated to the non-single crystal semiconductor film while moving a position of the beam spot,

wherein the optical element has a pair of reflection planes provided oppositely for reflecting the laser beam in a direction where the energy distribution is homogenized, and

wherein the optical element has a curved surface on its entrance of the laser beam.

10. A method for manufacturing a semiconductor device comprising:

forming a semiconductor film over a substrate, and

irradiating the semiconductor film with a laser beam while moving a position of the beam spot,

wherein the laser beam is emitted from a laser oscillator and is shaped into a rectangular beam spot on the semiconductor film through an optical system,

wherein the optical system includes an optical element for homogenizing energy distribution of the laser beam,

wherein the optical element has a pair of reflection planes provided oppositely for reflecting the laser beam in a direction where the energy distribution is homogenized, and

wherein the optical element has a curved surface on its entrance of the laser beam.

12. A method for manufacturing a semiconductor device according to claim 10 or claim 11,

wherein the optical element is a light pipe.

13. A method for manufacturing a semiconductor device according to claim 10 or claim 11,

wherein the optical element is an optical waveguide.

14. A method for manufacturing a semiconductor device according to claim 10 or claim 11,

wherein the curved surface has curvature in a direction where the optical element acts.

15. A method for manufacturing a semiconductor device according to claim 10 or claim 11,

wherein the rectangular beam spot has an aspect ratio of 10 or more.

16. A method for manufacturing a semiconductor device according to claim 10 or claim 11,

wherein the rectangular beam spot has an aspect ratio of 100 or more.

17. A method for manufacturing a semiconductor device according to claim 10 or claim 11,

wherein the laser oscillator is one selected from the group consisting of an excimer laser, a YAG laser, a glass laser, a YVO₄ laser, a YLF laser, an Ar laser, and a GdVO₄ laser.

11. A method for manufacturing a semiconductor device comprising:

forming a semiconductor film over a substrate, and

irradiating the semiconductor film with a laser beam while moving a position of the beam spot,

wherein the laser beam is emitted from a laser oscillator and is shaped into a rectangular beam spot on the semiconductor film through an optical system,

wherein the optical system includes an optical element for homogenizing energy distribution of the laser beam and one or a plurality of cylindrical lenses for projecting a plane having homogeneous energy distribution formed by the optical element to the semiconductor film,

wherein the optical element has a pair of reflection planes provided oppositely for reflecting the laser beam in a direction where the energy distribution is homogenized, and

wherein the optical element has a curved surface on its entrance of the laser beam.