Sacrificial inorganic polymer intermetal dielectric damascene wire and via liner
First Claim
1. A method of forming an interconnect structure comprising the steps of:
- providing a lower metal wiring layer having first metal lines located within a lower low-k dielectric;
depositing an upper low-k dielectric atop said lower metal wiring layer;
etching at least one portion of said upper low-k dielectric to provide at least one via to said first metal lines;
forming rigid dielectric sidewall spacers in said at least one via of said upper low-k dielectric, said dielectric sidewall spacers are of a material selected from the group consisting of SiCH, SiCOH, and SiO2; and
forming second metal lines in said at least one portion of said upper low-k dielectric.
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Accused Products
Abstract
The present invention provides a method of forming a rigid interconnect structure, and the device therefrom, including the steps of providing a lower metal wiring layer having first metal lines positioned within a lower low-k dielectric; depositing an upper low-k dielectric atop the lower metal wiring layer; etching at least one portion of the upper low-k dielectric to provide at least one via to the first metal lines; forming rigid dielectric sidewall spacers in at least one via of the upper low-k dielectric; and forming second metal lines in at least one portion of the upper low-k dielectric. The rigid dielectric sidewall spacers may comprise of SiCH, SiC, SiNH, SiN, or SiO2. Alternatively, the via region of the interconnect structure may be strengthened with a mechanically rigid dielectric comprising SiO2, SiCOH, or doped silicate glass.
28 Citations
8 Claims
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1. A method of forming an interconnect structure comprising the steps of:
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providing a lower metal wiring layer having first metal lines located within a lower low-k dielectric; depositing an upper low-k dielectric atop said lower metal wiring layer; etching at least one portion of said upper low-k dielectric to provide at least one via to said first metal lines; forming rigid dielectric sidewall spacers in said at least one via of said upper low-k dielectric, said dielectric sidewall spacers are of a material selected from the group consisting of SiCH, SiCOH, and SiO2; and forming second metal lines in said at least one portion of said upper low-k dielectric. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification