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Semiconductor constructions

  • US 7,170,139 B2
  • Filed: 12/28/2004
  • Issued: 01/30/2007
  • Est. Priority Date: 09/17/1996
  • Status: Expired due to Fees
First Claim
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1. A semiconductor structure comprising:

  • a dielectric layer on a substrate;

    a gate structure over the dielectric layer, the gate structure comprising;

    a polysilicon material layer;

    a conductive reaction barrier layer over the polysilicon material layer; and

    a metal layer over the conductive reaction barrier layer, the gate structure having a pair of sidewalls each comprising a polysilicon material surface and a metal-comprising surface;

    a non-oxide spacer directly against each of the sidewalls, the non-oxide spacer comprising a first non-oxide material and a second non-oxide material and covering an entirety of the polysilicon material surface and the metal-comprising surface; and

    an oxidized region of the polysilicon material adjacent the dielectric layer and each of the non-oxide spacers.

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