Semiconductor device
First Claim
1. A semiconductor device comprising:
- a first wiring having a projection over an insulating surface, comprising;
a first conductive layer;
a second conductive layer formed over the first conductive layer and in the shape of a projection; and
a third conductive layer formed over the first conductive layer and the second conductive layer;
an insulating layer over the first wiring; and
a second wiring over the insulating layer,wherein the first wiring is electrically connected to the second wiring at the projection through a hole in the insulating layer.
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Accused Products
Abstract
A technology for easily forming a multi-layer wiring structure that is fine and reliable. In the multi-layer wiring structure, the lower-layer wiring and the upper-layer wiring that are formed to sandwich an insulating layer are electrically connected to each other in a projection formed in the lower-layer wiring. The projection includes a columnar conductive member and the upper and lower layers thereof and each of the lower layer and the upper layer is formed of a conductive layer formed over the entire lower-layer wiring. The upper-layer is electrically connected to the lower-layer wiring in the portion where the projection is exposed substantially on the same plane as the top surface of the insulating layer.
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Citations
33 Claims
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1. A semiconductor device comprising:
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a first wiring having a projection over an insulating surface, comprising; a first conductive layer; a second conductive layer formed over the first conductive layer and in the shape of a projection; and a third conductive layer formed over the first conductive layer and the second conductive layer; an insulating layer over the first wiring; and a second wiring over the insulating layer, wherein the first wiring is electrically connected to the second wiring at the projection through a hole in the insulating layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a first insulating layer having a contact hole; a first wiring having a projection over the first insulating layer, comprising; a first conductive layer; a second conductive layer formed over the first conductive layer and in the shape of a projection; and a third conductive layer formed over the first conductive layer and the second conductive layer; a second insulating layer over the first wiring; and a second wiring over the second insulating layer, wherein the first wiring is electrically connected to the second wiring at the projection through a hole in the second insulating film, and wherein the contact hole is filled with a material that is identical to a material contained in the second conductive layer. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a first insulating layer having a contact hole; a first conductive layer formed over a top surface of the first insulating layer and in the contact hole; a second conductive layer filling the contact hole; a third conductive layer over a portion of the first conductive layer; a fourth conductive layer over the first, the second and the third conductive layers; a second insulating layer over the fourth conductive layer; and a fifth conductive layer over the second insulating layer, wherein a projection is formed by the first, the third and the fourth conductive layers in a portion where the first, the third and the fourth conductive layers are overlapped, and wherein the fourth conductive layer is electrically connected to the fifth conductive layer through a hole in the second insulating layer. - View Dependent Claims (14, 15, 16, 17)
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18. A semiconductor device comprising:
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a thin film transistor comprising; a semiconductor layer; a gate insulating film; and a gate electrode; a first insulating layer having a contact hole over the thin film transistor; a first conductive layer formed over a top surface of the first insulating layer and in the contact hole; a second conductive layer filling the contact hole; a third conductive layer over a portion of the first conductive layer; a fourth conductive layer over the first, the second and the third conductive layers; a second insulating layer over the fourth conductive layer; and a fifth conductive layer over the second insulating layer, wherein a projection is formed by the first, the third and the fourth conductive layers in a portion where the first, the third and the fourth conductive layers are overlapped, and wherein the fourth conductive layer is electrically connected to the fifth conductive layer through a hole in the second insulating layer. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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25. A semiconductor device comprising:
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a thin film transistor comprising; a semiconductor layer; a gate insulating film; and a gate electrode; a first insulating layer having a contact hole over the thin film transistor; a first conductive layer formed over a top surface of the first insulating layer and in the contact hole; a second conductive layer filling the contact hole; a third conductive layer over a portion of the first conductive layer; a fourth conductive layer over the first, the second and the third conductive layers; a second insulating layer over the fourth conductive layer; and a fifth conductive layer over the second insulating layer; a light emitting layer over the fifth conductive layer; and a sixth conductive layer over the light emitting layer, wherein the first conductive layer is electrically connected to the semiconductor layer, wherein a projection is formed by the first, the third and the fourth conductive layers in a portion where the first, the third and the fourth conductive layers are overlapped, and wherein the fourth conductive layer is electrically connected to the fifth conductive layer through a hole in the second insulating layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33)
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Specification