Method of manufacturing an on-chip transformer balun
First Claim
1. A method of manufacturing an on-chip transformer balun, the method comprises:
- creating, on a substrate, a primary winding having at least one primary turn on a first dielectric layer and at least one metal bridge on a second dielectric layer, wherein the at least one primary turn is substantially symmetrical; and
creating, on the semiconductor substrate, a secondary winding having at least one secondary turn on a third dielectric layer and at least one metal bridge on a fourth dielectric layer, wherein the at least one secondary turn is substantially symmetrical, and wherein the secondary winding is magnetically coupled to the primary winding.
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Accused Products
Abstract
A method of manufacturing an on-chip transformer balun includes creating, on a semiconductor substrate, a primary winding having at least one substantially symmetrical primary turn on a first dielectric layer and at least one metal bridge on a second layer. A secondary winding is created on the semiconductor substrate, the secondary winding having at least one substantially symmetrical secondary turn on a third dielectric layer and at least one metal bridge on a fourth dielectric layer. In an alternative embodiment, the primary winding has at least one first primary turn on a first dielectric layer and at least one second primary turn on a second dielectric layer and at least one via that operably connects the first primary turn to the second primary turn. The secondary winding has at least one first secondary turn on a third dielectric layer and at least one second secondary turn on a fourth dielectric layer.
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Citations
6 Claims
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1. A method of manufacturing an on-chip transformer balun, the method comprises:
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creating, on a substrate, a primary winding having at least one primary turn on a first dielectric layer and at least one metal bridge on a second dielectric layer, wherein the at least one primary turn is substantially symmetrical; and creating, on the semiconductor substrate, a secondary winding having at least one secondary turn on a third dielectric layer and at least one metal bridge on a fourth dielectric layer, wherein the at least one secondary turn is substantially symmetrical, and wherein the secondary winding is magnetically coupled to the primary winding. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification