Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization

• US 7,172,491 B2
• Filed: 08/18/2005
• Issued: 02/06/2007
• Est. Priority Date: 08/31/1999
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: Micron Technology, Inc.
• Inventors: Moore, Scott E.
• Primary Examiner(s): RACHUBA, MAURINA T
• Application Number:
  US11/208,217
• Publication Number:
  US 20060003673A1
• Time in Patent Office: 537 Days
• Field of Search: 451/5, 451/9, 451/287, 451/443, 451/444, 451/11, 451/21, 451/28, 451/56, 451/285, 451/288, 451/286, 451/41
• US Class Current: 451/5
• CPC Class Codes: B24B 49/006 taking regard of the speed
• CPC Class Codes: B24B 49/16 taking regard of the load
• CPC Class Codes: B24B 53/017 Devices or means for dressing, cleaning or otherwise conditioning lapping tools
• CPC Class Codes: B24B 53/12 Dressing tools; Holders therefor

Abstract

A method and apparatus for conditioning and monitoring a planarizing medium used for planarizing a microelectronic substrate. In one embodiment, the apparatus can include a conditioning body having a conditioning surface that engages a planarizing surface of the planarizing medium and is movable relative to the planarizing medium. A force sensor is coupled to the conditioning body to detect a frictional force imparted to the conditioning body by the planarizing medium when the conditioning body and the planarizing medium are moved relative to each other. The apparatus can further include a feedback device that controls the motion, position, or force between the conditioning body and the planarizing medium to control the conditioning of the planarizing medium.

Claims

1. A method for monitoring polishing pads used for planarizing a microelectronic substrate, the method comprising:

engaging a conditioning body with a first planarizing surface of a first polishing pad;

applying a force to the first polishing pad via the conditioning body;

moving at least one of the first polishing pad and the conditioning body relative to the other of the first polishing pad and the conditioning body;

detecting a first frictional force of the first polishing pad on the conditioning body in a plane of the first planarizing surface;

engaging the conditioning body with a second planarizing surface of a second polishing pad;

applying a force to the second polishing pad via the conditioning body;

moving at least one of the second polishing pad and the conditioning body relative to the other of the second polishing pad and the conditioning body;

detecting a second frictional force of the second polishing pad on the conditioning body in a plane of the second planarizing surface; and

comparing the first and second frictional forces.

2. The method of claim 1 wherein applying a force to the first polishing pad includes applying a force to the conditioning body different than a weight of the conditioning body and wherein applying a force to the second polishing pad includes applying a force to the conditioning body different than the weight of the conditioning body.

3. The method of claim 1, further comprising removing material from at least one of the first and second planarizing surfaces using the conditioning body.