Fabrication of semiconductor interconnect structures
First Claim
1. A method of fabricating conductive structures in a plurality of cavities formed in a surface of a substrate, wherein the surface and the cavities are coated with a conducting film, and wherein the conducting film comprises a barrier layer, the method comprising the steps of:
- performing in a first station an electrochemical mechanical deposition (ECMD) process for filling a conductive material into the plurality of cavities until a planar layer of conductive material with a predetermined thickness is formed on the surface of the substrate;
moving the substrate to a second station after performing the ECMD process; and
applying a chemical mechanical polishing process in the second station to polish the conductive material and the conducting film off the surface of the substrate.
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Accused Products
Abstract
A system and a method of forming copper interconnect structures in a surface of a wafer is provided. The method includes a step of performing a planar electroplating process in an electrochemical mechanical deposition station for filling copper material into a plurality of cavities formed in the surface of the wafer. The electroplating continues until a planar layer of copper with a predetermined thickness is formed on the surface of the wafer. In a following chemical mechanical polishing step the planar layer is removed until the copper remains in the cavities, insulated from one another by exposed regions of the dielectric layer.
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Citations
16 Claims
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1. A method of fabricating conductive structures in a plurality of cavities formed in a surface of a substrate, wherein the surface and the cavities are coated with a conducting film, and wherein the conducting film comprises a barrier layer, the method comprising the steps of:
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performing in a first station an electrochemical mechanical deposition (ECMD) process for filling a conductive material into the plurality of cavities until a planar layer of conductive material with a predetermined thickness is formed on the surface of the substrate; moving the substrate to a second station after performing the ECMD process; and applying a chemical mechanical polishing process in the second station to polish the conductive material and the conducting film off the surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of fabricating conductive structures in a plurality of cavities formed in a surface of a substrate, wherein the surface and the cavities are coated with a conducting film, and wherein the conducting film comprises a barrier layer, the method comprising the steps of:
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performing an electrochemical mechanical deposition (ECMD) process for filling a conductive material into the plurality of cavities until a planar layer of conductive material with a predetermined thickness is formed on the surface of the substrate; and applying a two step chemical mechanical polishing process to polish the conductive material and the conducting film off the surface of the substrate, wherein a first step of the polishing process removes the conductive material on the surface of the substrate and then a second step of the polishing process removes the barrier layer on the surface so that the conductive material remains in the cavities, isolated from one another.
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15. A method of fabricating conductive structures in a plurality of cavities formed in a surface of a substrate, wherein the surface and the cavities are coated with a conducting film, and wherein the conducting film comprises a barrier layer, the method comprising the steps of:
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performing in a first station an electrochemical mechanical deposition process for filling a conductive material into the plurality of cavities until a planar layer of conductive material with a predetermined thickness is formed on the surface of the substrate; moving the substrate into a second station after performing the electrochemical mechanical deposition process; and applying in a second station a single step chemical mechanical polishing process to polish the conductive material and the conductive film off the surface of the substrate so that the conductive material remains in the cavities, isolated from one another.
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16. A method of manufacturing a semiconductor device comprising:
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electroplating in a first station a planar layer of conductive material onto a substrate using an electrochemical mechanical deposition (ECMD) process; moving the substrate into a second station after electroplating; and performing in a second station a chemical mechanical process to polish the conductive layer.
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Specification