Light emitting diode having an adhesive layer and a reflective layer and manufacturing method thereof

• US 7,172,909 B2
• Filed: 10/28/2004
• Issued: 02/06/2007
• Est. Priority Date: 07/04/2003
• Status: Expired due to Term

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: Epistar Corporation (Ennostar, Inc.)
• Inventors: Liu, Wen-Huang, Hsieh, Min-Hsun, Tseng, Tzu-Feng, Wang, Jen-Shui, Yeh, Ting-Wei
• Primary Examiner(s): Whitehead, Jr.; Carl
• Assistant Examiner(s): Dolan; Jennifer M.
• Application Number:
  US10/904,185
• Publication Number:
  US 20050079641A1
• Time in Patent Office: 831 Days
• Field of Search: 257/E33.067, 257/E33.068, 257/E33.071, 257/E33.072, 438/26, 438/27
• US Class Current: 438/26
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector

Abstract

A light emitting diode having an adhesive layer and a reflective layer and a manufacturing method thereof featured by adhering together a light emitting diode stack and a substrate having a reflective metal layer by use of a transparent adhesive layer so that the light rays directed to the reflective metal layer can be reflected therefrom to improve the brightness of the light emitting diode.

Claims

1. A method for manufacturing a light emitting diode comprising the steps of:

forming an LED stack over a first substrate;

forming a first reaction layer over said LED stack;

forming a reflective layer over a second substrate;

forming a second reaction layer over said reflective layer; and

holding together said first reaction layer and said second reaction layer by means of a transparent adhesive layer, wherein the first and second reaction layers enhance adhesion provided by the transparent adhesive layer;

wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), and perfluorocyclobutane (PFCB); and

wherein each of said first and second reaction layers comprises at least a material selected from the group consisting of SiNx, Ti, and Cr.

2. A method for manufacturing a light emitting diode according to claim 1, wherein said reflective layer is a reflective metal layer.

3. A method for manufacturing a light emitting diode according to claim 2, wherein said reflective metal layer comprises a material selected from the group consisting of In, Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, and AuZn.

4. A method for manufacturing a light emitting diode according to claim 1, wherein said reflective layer is a reflective oxide layer.

5. A method for manufacturing a light emitting diode according to claim 4, wherein said reflective oxide layer comprises a material selected from the group consisting of SiN_x, SiO₂, Al₂O₃, TiO₂, and MgO.

6. A method for manufacturing a light emitting diode according to claim 1, wherein forming a reflective layer over a second substrate comprises the steps of forming a semiconductor stack over said second substrate and forming a reflective layer over said semiconductor stack.

7. A method for manufacturing a light emitting diode according to claim 1, wherein the method further comprises the step of removing said first substrate.

8. A method for manufacturing a light emitting diode comprising the steps of:

forming an LED stack over a first substrate;

forming a first reaction layer over said LED stack;

forming a second reaction layer over a reflective metal substrate; and

holding together said first reaction layer and said second reaction layer by means of a transparent adhesive layer, wherein the first and second reaction layers enhance adhesion provided by the transparent adhesive layer;

wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polvimide (PI), benzocyclobutene (BCB), and perfluorocyclobutane (PFCB); and

wherein each of said first and second reaction layers comprises at least a material selected from the group consisting of SiNx, Ti, and Cr.

9. A method for manufacturing a light emitting diode according to claim 8, wherein said reflective metal substrate comprises a material selected from the group consisting of Sn, Al, Au, Pt, Zn, Ag, Ti, Pb, Pd, Ge, Cu, AuBe, AuGe, Ni, PbSn, and AuZn.

10. A method for manufacturing a light emitting diode according to claim 8, wherein the step of forming a second reaction layer over a reflective metal substrate comprises the steps of forming a reflective layer over said reflective metal substrate and forming a second reaction layer over said reflective layer.

11. A method for manufacturing a light emitting diode according to claim 8, wherein the method further comprises the step of removing said first substrate.

12. A method for manufacturing a light emitting diode comprising the steps of;

forming an LED stack over a first substrate;

forming a first reaction layer over said LED stack;

forming a second reaction layer over a reflective means; and

holding together said first reaction layer and said second reaction layer by means of a transparent adhesive layer, wherein the first and second reaction layers enhance adhesion provided by the transparent adhesive layer;

wherein said transparent adhesive layer comprises at least a material selected from the group consisting of polyimide (PI), benzocyclobutene (BCB), and perfluorocyclobutane (PFCB); and

wherein each of said first and second reaction layers comprises at least a material selected from the group consisting of SiNx, Ti, and Cr.