Infrared thermopile detector system for semiconductor process monitoring and control

• US 7,172,918 B2
• Filed: 12/09/2003
• Issued: 02/06/2007
• Est. Priority Date: 05/08/2002
• Status: Expired due to Term

• Current Assignee: Entegris Incorporated
• Original Assignee: Advanced Technology Materials, Inc. (Entegris Incorporated)
• Inventors: Arno, Jose
• Primary Examiner(s): Lebentritt, Michael
• Assistant Examiner(s): STEVENSON, ANDRE C
• Application Number:
  US10/731,355
• Publication Number:
  US 20040113080A1
• Time in Patent Office: 1,155 Days
• Field of Search: 257/436, 257/440, 257/458, 257464-467, 257/470, 257/930, 257/E21.252, 257/E27.008, 257/E27.144, 257/E29.324, 257/E31.093, 257/460, 257/232, 257/293, 257/417, 257/431, 438/7, 438/14, 438/46, 438 50- 54, 438/200, 438/343, 438/689, 438/758
• US Class Current: 438/50
• CPC Class Codes: G01J 5/0007 of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
• CPC Class Codes: G01J 5/0014 for sensing the radiation from gases, flames
• CPC Class Codes: G01J 5/025 Interfacing a pyrometer to an external device or network; User interface
• CPC Class Codes: G01J 5/12 using thermoelectric elements, e.g. thermocouples
• CPC Class Codes: G01N 21/3504 for analysing gases, e.g. multi-gas analysis
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: Y10T 483/16 with means to transfer work

Abstract

A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.

Claims

1. A semiconductor process system adapted for processing of or with a material therein, said system comprising:

a sampling region for the material;

an infrared radiation source constructed and arranged to transmit an infrared radiation beam through the sampling region;

a thermopile detector constructed and arranged to receive infrared radiation after the transmission of the infrared beam through the sampling region and to responsively generate an output signal correlative of said material; and

a process controller arranged to receive the output of the thermopile detector and to responsively control one or more process conditions in and/or affecting the semiconductor process system, wherein the infrared radiation source comprises an infrared radiation lamp.

2. The semiconductor process system of claim 1, wherein the infrared radiation lamp generates said infrared radiation beam in a wavelength range of from about 2 to about 4.6 μ

m.

3. A semiconductor process system adapted for processing of or with a material therein, said system comprising:

a sampling region for the material;

an infrared radiation source constructed and arranged to transmit an infrared radiation beam through the sampling region;

a thermopile detector constructed and arranged to receive infrared radiation after the transmission of the infrared beam through the sampling region and to responsively generate an output signal correlative of said material; and

a process controller arranged to receive the output of the thermopile detector and to responsively control one or more process conditions in and/or affecting the semiconductor process system, wherein the infrared radiation source further comprises mirrors adapted to focus said infrared radiation beam.

4. The semiconductor process system of claim 3, wherein the mirrors are adapted to multipass said infrared radiation beam multiple times across the sampling region to enhance detection limit of said thermopile detector.

5. A semiconductor process system adapted for processing of or with a material therein, said system comprising:

a sampling region for the material;

an infrared radiation source constructed and arranged to transmit an infrared radiation beam through the sampling region;

a thermopile detector constructed and arranged to receive infrared radiation after the transmission of the infrared beam through the sampling region and to responsively generate an output signal correlative of said material; and

a process controller arranged to receive the output of the thermopile detector and to responsively control one or more process conditions in and/or affecting the semiconductor process system, wherein the infrared radiation source generates said infrared radiation beam in a wavelength range of from about 2 to about 4.6 μ

m.