Devices for imaging radionuclide emissions
First Claim
Patent Images
1. A device for imaging radionuclide emissions comprising:
- a charge coupled device or CMOS active pixel sensor device; and
a scintillator layer directly coated onto the charge coupled device or CMOS active pixel sensor device;
in which the thickness of the scintillator layer is greater than 200 μ
m.
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Abstract
There is disclosed a device for imaging radionuclide emissions comprising: a charge coupled device or CMOS active pixel sensor device; and a scintillator layer in direct contact with the charge coupled device or CMOS active pixel sensor device; in which the thickness of the scintillator layer is greater than 200 μm, preferably greater than 400 μm, most preferably about 500 μm.
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Citations
24 Claims
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1. A device for imaging radionuclide emissions comprising:
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a charge coupled device or CMOS active pixel sensor device; and a scintillator layer directly coated onto the charge coupled device or CMOS active pixel sensor device; in which the thickness of the scintillator layer is greater than 200 μ
m. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. An apparatus for imaging radionuclide emissions from a source, the apparatus comprising:
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a solid state pixel sensor device; a scintillator directly coated onto the pixel sensor device; a signal processing circuit coupled to receive an output from the pixel sensor device, which signal processing circuit is configurable to operate in a photon counting mode; and in which the thickness of the scintillator is greater than 200 μ
m. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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Specification