Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone
First Claim
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1. A vertical semiconductor component comprising:
- a semiconductor body including a first side and a second side;
a drift zone of a first conduction type positioned in the semiconductor body between the first side and the second side, the drift zone operable to take up a reverse voltage;
a field electrode arrangement positioned in the drift zone, the field electrode arrangement including at least one electrically conductive field electrode insulated from the semiconductor body; and
at least one semiconductor zone arranged in floating fashion in the drift zone or arranged in floating fashion adjoining the drift zone, wherein the at least one field electrode is electrically coupled to the at least one semiconductor zone.
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Abstract
The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features:
- a semiconductor body (100) having a first side (101) and a second side (102),
- a drift zone (30) of a first conduction type which is arranged in the region between the first and the second sides (101, 102) and is formed for the purpose of taking up a reverse voltage,
- a field electrode arrangement arranged in the drift zone (30) and having at least one electrically conducted field electrode (40; 40A–40E; 90A–90J) arranged in a manner insulated from the semiconductor body (100), an electrical potential of the at least one field electrode (40; 40A–40E; 90A–90J) varying in the vertical direction of the semiconductor body (100) at least when a reverse voltage is applied.
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21 Claims
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1. A vertical semiconductor component comprising:
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a semiconductor body including a first side and a second side; a drift zone of a first conduction type positioned in the semiconductor body between the first side and the second side, the drift zone operable to take up a reverse voltage; a field electrode arrangement positioned in the drift zone, the field electrode arrangement including at least one electrically conductive field electrode insulated from the semiconductor body; and at least one semiconductor zone arranged in floating fashion in the drift zone or arranged in floating fashion adjoining the drift zone, wherein the at least one field electrode is electrically coupled to the at least one semiconductor zone. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 21)
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17. A vertical semiconductor component having connection terminals, comprising:
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a semiconductor body including a first side and a second side; a drift zone of a first conduction type positioned in the semiconductor body between the first side and the second side, the drift zone operable to take up a reverse voltage; a field electrode arrangement positioned in the drift zone, the field electrode arrangement including at least one electrically conductive field electrode insulated from the semiconductor body; and at least one semiconductor zone arranged in the drift zone or arranged adjoining the drift zone, the at least one semiconductor zone floating with respect to the connection terminals, wherein the at least one field electrode is electrically coupled to the at least one semiconductor zone. - View Dependent Claims (18, 19, 20)
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Specification