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Semiconductor device having deep trench charge compensation regions and method

  • US 7,176,524 B2
  • Filed: 02/15/2005
  • Issued: 02/13/2007
  • Est. Priority Date: 02/15/2005
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a body of semiconductor material; and

    a charge compensation region including a trench formed in the body of semiconductor material, wherein the trench comprises;

    a first epitaxial layer of a first conductivity type formed overlying sidewalls and a lower surface of the trench;

    a first intrinsic layer formed overlying the first epitaxial layer;

    a second epitaxial layer of a second conductivity type formed overlying the first intrinsic layer, wherein the first intrinsic layer is formed between the first and second epitaxial layers to reduce intermixing of opposite conductivity type dopants; and

    a second intrinsic layer formed overlying the second epitaxial layer.

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