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Glass-based SOI structures

  • US 7,176,528 B2
  • Filed: 02/12/2004
  • Issued: 02/13/2007
  • Est. Priority Date: 02/18/2003
  • Status: Active Grant
First Claim
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1. A semiconductor-on-insulator layered structure comprising a substantially single-crystal semiconductor material (material S) and an oxide glass or an oxide glass-ceramic which comprises positive ions (material G), wherein at least a part of the structure comprises in order:

  • material S;

    material S with an enhanced oxygen content;

    material G with a reduced positive ion concentration having substantially no modifier positive ions;

    material G with an enhanced positive ion concentration of modifier positive ions, including at least one alkaline earth modifier ion from the material G with a reduced positive ion concentration; and

    material G.

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