Glass-based SOI structures
First Claim
1. A semiconductor-on-insulator layered structure comprising a substantially single-crystal semiconductor material (material S) and an oxide glass or an oxide glass-ceramic which comprises positive ions (material G), wherein at least a part of the structure comprises in order:
- material S;
material S with an enhanced oxygen content;
material G with a reduced positive ion concentration having substantially no modifier positive ions;
material G with an enhanced positive ion concentration of modifier positive ions, including at least one alkaline earth modifier ion from the material G with a reduced positive ion concentration; and
material G.
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Accused Products
Abstract
Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000° C., a resistivity at 250° C. that is less than or equal to 1016 Ω-cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300–1000° C.). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions.
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Citations
32 Claims
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1. A semiconductor-on-insulator layered structure comprising a substantially single-crystal semiconductor material (material S) and an oxide glass or an oxide glass-ceramic which comprises positive ions (material G), wherein at least a part of the structure comprises in order:
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material S; material S with an enhanced oxygen content; material G with a reduced positive ion concentration having substantially no modifier positive ions; material G with an enhanced positive ion concentration of modifier positive ions, including at least one alkaline earth modifier ion from the material G with a reduced positive ion concentration; and material G. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A semiconductor-on-insulator layered structure comprising a substantially single-crystal semiconductor material (material S) and an oxide glass or an oxide glass-ceramic which comprises positive ions (material G), wherein at least a part of the structure comprises in order:
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material S; material S with an enhanced oxygen content; material G with a reduced modifier positive ion concentration; material G with an enhanced modifier positive ion concentration; and material G, wherein the material G with the reduced modifier positive ion concentration is operable to inhibit ion re-migration from the material G into the material S. - View Dependent Claims (24, 25, 26)
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27. A semiconductor-on-insulator layered structure, comprising:
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a first layer of substantially single-crystal semiconductor material; a second layer of substantially single-crystal semiconductor material with an enhanced oxygen content located on the first layer; and a substrate of an oxide glass or an oxide glass-ceramic having;
(i) a first substrate layer adjacent the second layer of substantially single-crystal semiconductor material, the first substrate layer having a reduced positive ion concentration in which substantially no modifier positive ions are present, and (ii) a second substrate layer adjacent the first substrate layer and having an enhanced positive ion concentration of modifier positive ions, including at least one alkaline earth modifier ion. - View Dependent Claims (28, 29, 30, 31, 32)
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Specification