Semiconductor module

• US 7,176,579 B2
• Filed: 12/12/2003
• Issued: 02/13/2007
• Est. Priority Date: 12/27/2002
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Endoh, Tsuneo, Nakajima, Hirokazu, Konishi, Satoru, Tsuchiya, Masaaki
• Primary Examiner(s): Vigushin; John B.
• Application Number:
  US10/733,581
• Publication Number:
  US 20040125579A1
• Time in Patent Office: 1,159 Days
• Field of Search: None
• US Class Current: 257/777
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 2225/0651 Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 2225/06555 Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
• CPC Class Codes: H01L 2225/06582 Housing for the assembly, e.g. chip scale package [CSP]
• CPC Class Codes: H01L 2225/06589 Thermal management, e.g. cooling
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0657 : Stacked arrangements of devices
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/1517 : Multilayer substrate
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19011 : including integrated passive components
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19104 : on the semiconductor or solid-state device, i.e. passive-on-chip
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H05K 1/0206 : by printed thermal vias
• CPC Class Codes: H05K 1/0298 : Multilayer circuits
• CPC Class Codes: H05K 1/183 : Components mounted in and supported by recessed areas of the printed circuit board

Abstract

The present invention realizes the miniaturization of a semiconductor module. The semiconductor module includes a module board having external electrode terminals and a heat radiation pad over a lower surface thereof, a first semiconductor chip incorporating an initial-stage transistor of a high frequency power amplifying device therein, a second semiconductor chip incorporating a next-stage transistor and a final-stage transistor therein, and an integrated passive device which constitutes a matching circuit. At least one of the first semiconductor chip and the second semiconductor chip and the integrated passive device are mounted over an upper surface of the module board in an overlapped manner.

Claims

1. A semiconductor module comprising:

a module board having a wiring over an upper surface thereof and external electrode terminals over a lower surface thereof;

a first semiconductor chip and a second semiconductor chip formed over the module board and including active elements; and

an integrated passive device,

wherein one semiconductor chip out of the first semiconductor chip and the second semiconductor chip and the integrated passive device are mounted over an upper surface of the module board in an overlapped manner, and wherein the first semiconductor chip and the second semiconductor chip include an amplifying circuit and an output of the first semiconductor chip is inputted to the second semiconductor chip.

2. A semiconductor module according to claim 1, wherein an inter-stage matching circuit is provided between the first semiconductor chip and the second semiconductor chip and the inter-stage matching circuit is formed of the integrated passive device.

3. A semiconductor module according to claim 2, wherein the semiconductor module includes an input matching circuit which is connected to an input portion of the first semiconductor chip and an output matching circuit which is connected to an output portion of the second semiconductor chip, and the output matching circuit is formed by the connection of discrete parts.

4. A semiconductor module comprising:

a module board having a wiring over an upper surface thereof and external electrode terminals over a lower surface thereof;

a first semiconductor chip and a second semiconductor chip formed over the module board and including active elements; and

an integrated passive device,

wherein the first semiconductor chip is mounted over the second semiconductor chip,

wherein a heat value of the second semiconductor chip is larger than a heat value of the first semiconductor chip.

5. A semiconductor module according to claim 4, wherein discrete parts are mounted over an upper surface of the module board.

6. A semiconductor module according to claim 4, wherein the integrated passive device is arranged over the first semiconductor chip.

7. A semiconductor module according to claim 4, wherein the integrated passive device is mounted over an upper surface of the first semiconductor chip, and the second semiconductor chip is mounted over the integrated passive device.

8. A semiconductor module according to claim 7, wherein discrete parts are mounted over an upper surface of the module board.

9. A semiconductor module according to claim 4, wherein the first semiconductor chip and the second semiconductor chip include amplifying circuits, an output of the first semiconductor chip is configured to be inputted to the second semiconductor chip, and an inter-stage matching circuit is provided between the first semiconductor chip and the second semiconductor chip.

10. A semiconductor module according to claim 9, wherein the semiconductor module includes an input matching circuit which is connected to an input portion of the first semiconductor chip and an output matching circuit which is connected to an output portion of the second semiconductor chip, and the output matching circuit is formed by the connection of discrete parts.

11. A semiconductor module comprising:

a module board having a wiring over an upper surface thereof and external electrode terminals over a lower surface thereof;

a first semiconductor chip and a second semiconductor chip over which active elements are formed; and

a first integrated passive device,

wherein the first semiconductor chip and the second semiconductor chip are arranged at an upper surface side of the module board with a predetermined distance therebetween,

wherein the first integrated passive device is arranged over an upper surface of the first semiconductor chip, and

wherein discrete parts are mounted over an upper surface of the module board.

12. A semiconductor module according to claim 11, wherein a second integrated passive device is mounted over an upper surface of the module board, and the second integrated passive device is mounted over an upper surface of the second semiconductor chip.

13. A semiconductor module comprising:

a module board having a wiring over an upper surface thereof and external electrode terminals over a lower surface thereof;

a first semiconductor chip and a second semiconductor chip over which active elements are formed; and

a first integrated passive device,

wherein the first semiconductor chip and the second semiconductor chip are arranged at an upper surface side of the module board with a predetermined distance therebetween,

wherein the first integrated passive device is arranged over an upper surface of the first semiconductor chip, and

wherein a second integrated passive device is mounted over an upper surface of the module board, and semiconductor chips including an active element are not present between the second integrated passive device and the module board.

14. A semiconductor module according to claim 13, wherein discrete parts are mounted over the upper surface of the module board.

15. A semiconductor module comprising:

a module board having a wiring over an upper surface thereof and external electrode terminals over a lower surface thereof;

a first semiconductor chip and a second semiconductor chip over which active elements are formed; and

a first integrated passive device,

wherein the first semiconductor chip and the second semiconductor chip are arranged at an upper surface side of the module board with a predetermined distance therebetween,

wherein the first semiconductor chip and the second semiconductor chip include amplifying circuits, an output of the first semiconductor chip is configured to be inputted to the second semiconductor chip, an inter-stage matching circuit is provided between the first semiconductor chip and the second semiconductor chip, and the inter-stage matching circuit is comprised of the integrated passive device.

16. A semiconductor module according to claim 15, wherein the semiconductor module includes an input matching circuit which is connected to an input portion of the first semiconductor chip and an output matching circuit which is connected to an output portion of the second semiconductor chip, and the output matching circuit is formed by the connection of a plurality of discrete parts.

17. A semiconductor module comprising:

a module board having a wiring over an upper surface thereof and external electrode terminals over a lower surface thereof; and

a first semiconductor chip and a second semiconductor chip formed over the module board and including active elements;

wherein the first semiconductor chip and the second semiconductor chip are arranged with a predetermined distance therebetween in the horizontal direction over an upper surface side of the module board,

wherein the first integrated passive device is mounted over the first semiconductor chip,

wherein the first semiconductor chip and the second semiconductor chip include amplifying circuits,

wherein an output of the first semiconductor chip is configured to be inputted to the second semiconductor chip,

wherein an inter-stage matching circuit is provided between the first semiconductor chip and the second semiconductor chip, and

wherein the inter-stage matching circuit is comprised of the first integrated passive device.

18. A semiconductor module according to claim 17, wherein the semiconductor module includes an input matching circuit which is connected to an input portion of the first semiconductor chip and an output matching circuit which is connected to an output portion of the second semiconductor chip, and the output matching circuit is formed by the connection of discrete parts.

19. A semiconductor module according to claim 18, wherein the first semiconductor chip and the module board are electrically connected to each other by conductive wires and the first integrated passive device and the module board are electrically connected to each other by conductive wires.

20. A semiconductor module according to claim 18, wherein a second integrated passive device is mounted over an upper surface of the module board, and semiconductor chips including an active element are not present between the second integrated passive device and the module board.

21. A semiconductor module according to claim 20, wherein the second integrated passive device and the module board are electrically connected to each other by conductive wires.

22. A semiconductor module comprising:

a module board having a wiring over an upper surface thereof and external electrode terminals over a lower surface thereof; and

a first semiconductor chip and a second semiconductor chip including active elements,

wherein the first semiconductor chip and the second semiconductor chip are arranged with a predetermined distance therebetween in the horizontal direction over an upper surface side of the module board,

wherein the first integrated passive device is arranged below the first semiconductor chip,

wherein the first semiconductor chip and the second semiconductor chip include amplifying circuits,

wherein an output of the first semiconductor chip is configured to be inputted to the second semiconductor chip,

wherein an inter-stage matching circuit is provided between the first semiconductor chip and the second semiconductor chip, and

wherein the inter-stage matching circuit is comprised of the first integrated passive device.

23. A semiconductor module according to claim 22, wherein the semiconductor module includes an input matching circuit which is connected to an input portion of the first semiconductor chip and an output matching circuit which is connected to an output portion of the second semiconductor chip.

24. A semiconductor module according to claim 23, wherein the first integrated passive device is mounted over an upper surface of the module board by a flip-chip connection.

25. A semiconductor module comprising:

a module board having a wiring over an upper surface thereof and external electrode terminals over a lower surface thereof; and

semiconductor chips including an active element; and

an integrated passive device mounted over an upper surface of at least one of the semiconductor chips,

wherein the semiconductor chips include a first amplifying circuit and a second amplifying circuit,

wherein an output of the first amplifying circuit is configured to be inputted to the second amplifying circuit,

wherein an inter-stage matching circuit is provided between the first amplifying circuit and the second amplifying circuit, and

wherein the inter-stage matching circuit is comprised of the integrated passive device.

26. A semiconductor module according to claim 25, wherein the semiconductor module includes an output matching circuit which is connected to an output portion of the second amplifying circuit, and the output matching circuit is formed by the connection of a plurality of discrete parts.

27. A semiconductor module comprising:

a module board having a wiring over an upper surface thereof and external electrode terminals over a lower surface thereof;

a first semiconductor chip and a second semiconductor chip formed over the module board and including active elements; and

an integrated passive device,

wherein one semiconductor chip out of the first semiconductor chip and the second semiconductor chip and the integrated passive device are mounted over an upper surface of the module board in an overlapped manner,

wherein the semiconductor module includes a heat radiation pad which is formed over a lower surface of the module board and a plurality of vias which are formed such that the vias vertically penetrate the module board and have lower ends thereof connected to the heat radiation pad, and the second semiconductor chip is arranged over the plurality of vias, and

wherein a recess is formed in an upper surface of the module board, and the vias are formed in a bottom of the recess in a plural number, and the second semiconductor chip is mounted over the bottom of the recess.

28. A semiconductor module according to claim 27, wherein the first semiconductor chip, the second semiconductor chip and the integrated passive device are covered with a sealing portion made of insulating resin.

29. A semiconductor module according to claim 28, wherein end portions of the sealing portion are not positioned outside the end portions of the module board.