Bouncing mode operated scanning micro-mirror

• US 7,177,063 B2
• Filed: 06/06/2005
• Issued: 02/13/2007
• Est. Priority Date: 08/12/2003
• Status: Active Grant

• Current Assignee: STMicroelectronics International N.V. (STMicroelectronics NV)
• Original Assignee: Terraop Limited
• Inventors: Medina, Moshe, Huber, Avigdor, Krylov, Slava, Lalezar, Ronen
• Primary Examiner(s): Thompson; Timothy
• Application Number:
  US11/144,842
• Publication Number:
  US 20050219677A1
• Time in Patent Office: 617 Days
• Field of Search: 359/245, 359/291, 359/290, 359/223, 359/224, 359/230, 359/877, 359/214, 359/871, 359/872, 345/108
• US Class Current: 359/245
• CPC Class Codes: B81B 3/0051 For defining the movement, i.e. structures that guide or limit the movement of an element mechanical arrangements for preventing or damping vibration or shock H01H3/60
• CPC Class Codes: G02B 26/0841 the reflecting element being moved or deformed by electrostatic means

Abstract

A MEMS apparatus for scanning an optical beam comprises a mirror operative to perform a rotational motion to a maximum rotation angle around a mirror rotation axis formed in a double active layer silicon-on-insulator (SOI) substrate. The apparatus may include a bouncing mechanism operative to provide a bouncing event and to reverse the rotational motion. The bouncing event provides the mirror with a piecewise linear response to actuation by intrinsically nonlinear electrostatic forces. In a particular embodiment, the bouncing mechanism includes a vertical comb drive stator built in the same active layer of the double active layer SOI substrate, while actuator comb drive stators are built in a different active layer.

Claims

1. A MEMS apparatus for scanning an optical beam comprising:

a. a mirror operative to perform a rotational motion to a maximum rotation angle around a mirror rotation axis; and

b. a bouncing mechanism operative to provide a bouncing event and to reverse said rotational motion, wherein said bouncing mechanism includes at least one first comb drive stator;

whereby said bouncing event provides said mirror with a piecewise linear response to actuation by intrinsically nonlinear forces.

2. The MEMS apparatus for scanning an optical beam of claim 1, further comprising an actuator operative to provide said actuation, said actuator connected to a substrate.

3. The MEMS apparatus for scanning an optical beam of claim 2, wherein said actuator includes a vertical comb drive actuator having at least one second comb drive stator in a different plane from a plane of said first comb drive stator.

4. The MEMS apparatus for scanning an optical beam of claim 2, wherein said substrate includes a double active layer silicon-on-insulator (SOI) substrate, wherein each said first comb drive stator is fabricated in a different active layer than each said second comb drive stator.

5. The MEMS apparatus for scanning an optical beam of claim 3, wherein said vertical comb drive actuator includes at least one rotor co-planar with and rigidly connected to said mirror.

6. A MEMS apparatus for scanning an optical beam comprising:

a. a double active layer silicon-on-insulator (DSOI) substrate having a first active Si layer, a substrate Si layer and a second active Si layer intermediate between said first active Si layer and said substrate Si layer;

b. a mirror formed in said first active Si layer and operative to perform a tilting motion to a maximum tilting angle around a mirror rotation axis; and

c. a vertical comb drive actuator having a first comb drive actuator element formed in said second active Si layer and operative to provide said tilting motion.

7. The MEMS apparatus for scanning an optical beam of claim 6, wherein said vertical comb drive includes at least one rotor co-planar with and rigidly connected to said mirror in one said first active Si layer, and at least one stator formed in said second active Si layer.

8. The MEMS apparatus for scanning an optical beam of claim 6, further comprising at least a pair of springs connecting said mirror on opposite sides to said substrate.

9. A tilting micro-mirror formed in a double active layer silicon-on-insulator (DSOI) substrate having, in order, a stacked structure of a first active Si layer, a second active Si layer and a substrate Si layer and actuated by a vertical comb drive formed in the same DSOI substrate, wherein said vertical comb drive includes at least one rotor formed in said first active Si layer and at least one stator formed in said second active Si layer.

10. The micro-mirror of claim 9, wherein said mirror is formed in the same active layer as said at least one rotor.

11. A method for controlling the path of a light beam reflected by a reflecting element formed in a double active layer silicon-on-insulator (DSOI) substrate having, in order, a stacked structure of a first active Si layer, a second active Si layer and a substrate Si layer, the method comprising the steps of:

a. providing at least one vertical comb drive having comb-drive elements formed in both active Si layers of said DSOI substrate; and

b. using said at least one vertical comb drive to tilt said reflecting element, thereby controlling said light beam path.

12. The method of claim 11, wherein said step of providing at least one vertical comb drive formed in said DSOI substrate includes:

i. providing at least one movable comb drive element rigidly connected to said reflecting element and formed in said first active Si layer, and

ii. providing at least one stationary comb drive element formed in said second active Si layer, said movable and stationary comb drive elements being electrostatically actuated to provide said tilt.

13. The method of claim 12, further comprising the step of providing at least one additional stationary comb drive element formed in the same active layer as said reflecting element and said movable comb drive element, said at least one additional stationary comb drive element operative to provide a bouncing event to said reflective element.

14. A MEMS apparatus for scanning an optical beam formed in a double active layer silicon-on-insulator (DSOI) substrate that includes, in order, a stacked structure of a first active Si layer, a second active Si layer and a substrate Si layer, the apparatus comprising:

a. a micro-mirror formed in said first active Si layer; and

b. a vertical comb drive operative to impart a tilting motion to said micro-mirror and comprising a rotor and a first stator, wherein said rotor is formed entirely and solely in said first active Si layer and said first stator is formed entirely and solely in said second active Si layer.

15. The MEMS apparatus for scanning an optical beam of claim 14, wherein said rotor and said first stator have respective rotor and stator interfaces with rotor and stator cavities formed in said substrate.

16. The MEMS apparatus for scanning an optical beam of claim 15, wherein said rotor cavity extends through said second active Si layer and said substrate Si layer and wherein said stator cavity extends through said substrate Si layer.

17. The MEMS apparatus for scanning an optical beam of claim 15, wherein said vertical comb drive further comprises a second stator formed in said first active Si layer.

18. The MEMS apparatus for scanning an optical beam of claim 15, wherein said rotor is rigidly attached to said micro-mirror by a torsional member, and wherein said micro-mirror and said torsional member have respective interfaces with micro-mirror and torsional member cavities extending through said second active Si layer and said substrate Si layer.

19. A method for forming a scanning micro-mirror in a double active silicon-on-insulator (DSOI) substrate that includes, in order, a stacked structure of a first active Si layer, a second active Si layer and a substrate Si layer, the method comprising the steps of:

a. forming a micro-mirror in said first active Si layer; and

b. forming a vertical comb drive operative to impart a tilting motion to said micro-mirror, said vertical comb drive comprising a rotor and a stator, wherein said rotor is formed entirely and solely in said first active Si layer and wherein said stator is formed entirely and solely in said second active Si layer.

20. The method of claim 19, wherein said forming of said rotor entirely and solely in said first active Si layer is achieved by removing second active Si layer and substrate Si layer sections bounding said rotor, and wherein said forming of said stator entirely and solely in said second active Si layer is achieved by removing substrate Si layer sections bounding said stator.