Chemical mechanical polishing test structures and methods for inspecting the same
First Claim
1. A method of fabricating a semiconductor die, comprising:
- forming a first test structure on the semiconductor die, wherein at least a portion of the first test structure includes a dummy structure in a top conductive layer, wherein the dummy structure of the first test structure serves as both a dummy structure and a part of a voltage contrast structure, wherein serving as a dummy structure is defined as the dummy structure of the first test structure being part of a plurality of dummy structures that are distributed within empty spaces of the semiconductor die to facilitate an even polishing of a surface of the semiconductor die, and wherein only a portion of the dummy structures each serve as a voltage contrast structure while the other portion of dummy structures do not each serve as a voltage contrast structure; and
performing voltage contrast testing on the first test structure that serves as both a dummy structure and a voltage contrast structure to detect electrical defects within the first test structure.
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Accused Products
Abstract
Disclosed is a semiconductor die having a plurality of dummy fillings positioned and sized to minimize defects during chemical mechanical polishing is disclosed. At least one of the dummy fillings is coupled to an underlying test structure. In a preferred embodiment, the semiconductor die also includes a plurality of conductive layers and a substrate. The underlying test structure includes a first layer portion formed from a first one of the plurality of conductive layer and a via coupling the first layer portion to the at least one dummy filling. In another aspect, the underlying test structure also has a via coupling the first layer portion to the substrate, and the underlying test structure comprises a plurality of layer portions and vias to form a multilevel test structure.
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Citations
14 Claims
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1. A method of fabricating a semiconductor die, comprising:
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forming a first test structure on the semiconductor die, wherein at least a portion of the first test structure includes a dummy structure in a top conductive layer, wherein the dummy structure of the first test structure serves as both a dummy structure and a part of a voltage contrast structure, wherein serving as a dummy structure is defined as the dummy structure of the first test structure being part of a plurality of dummy structures that are distributed within empty spaces of the semiconductor die to facilitate an even polishing of a surface of the semiconductor die, and wherein only a portion of the dummy structures each serve as a voltage contrast structure while the other portion of dummy structures do not each serve as a voltage contrast structure; and performing voltage contrast testing on the first test structure that serves as both a dummy structure and a voltage contrast structure to detect electrical defects within the first test structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification