Semiconductor base material and method of manufacturing the material
First Claim
1. A semiconductor base comprising a substrate and a semiconductor crystal grown by vapor phase growth on the substrate,wherein said substrate is a crystal substrate comprising sapphire, SiC, Si, Spinel, ZnO, GaAs or NGO and has a crystal growth plane having a concavo-convex surface,wherein said semiconductor crystal is an AlxGal−
- x−
yInyN (0≦
x≦
1, 0≦
y≦
1, 0≦
x+y≦
1) crystal which grew from each of the concave part and the convex part and joined to cover said concavo-convex surface,wherein, during the growth step of said semiconductor crystal, facet structure growth occurs from both the concave part and the convex part, andwherein said semiconductor crystal has, in the inside, a dislocation line extending in the C axis direction from the substrate and then bending in the lateral direction as a result of the facet structure growth.
4 Assignments
0 Petitions
Accused Products
Abstract
As shown in FIG. 1(a), substrate 1 having a growth plane having a concavo-convex surface is used. When GaN group crystal is vapor phase grown using this substrate, the concavo-convex shape suppresses growth in the lateral direction and promotes growth in the C axis direction, thereby affording a base surface capable of forming a facet plane. Thus, as shown in FIG. 1(b), a crystal having a facet plane is grown in a convex part, and a crystal is also grown in a concave part. When the crystal growth is continued, the films grown from the convex part and the concave part are joined in time to cover a concavo-convex surface and become flat as shown in FIG. 1(c). In this case, an area having a low a dislocation density is formed in the upper part of the convex part where facet plane was formed, and the prepared film has high quality.
-
Citations
9 Claims
-
1. A semiconductor base comprising a substrate and a semiconductor crystal grown by vapor phase growth on the substrate,
wherein said substrate is a crystal substrate comprising sapphire, SiC, Si, Spinel, ZnO, GaAs or NGO and has a crystal growth plane having a concavo-convex surface, wherein said semiconductor crystal is an AlxGal− - x−
yInyN (0≦
x≦
1, 0≦
y≦
1, 0≦
x+y≦
1) crystal which grew from each of the concave part and the convex part and joined to cover said concavo-convex surface,wherein, during the growth step of said semiconductor crystal, facet structure growth occurs from both the concave part and the convex part, and wherein said semiconductor crystal has, in the inside, a dislocation line extending in the C axis direction from the substrate and then bending in the lateral direction as a result of the facet structure growth. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
- x−
Specification