Bi-directional released-beam sensor

• US 7,179,674 B2
• Filed: 12/28/2004
• Issued: 02/20/2007
• Est. Priority Date: 12/28/2004
• Status: Active Grant

• Current Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Original Assignee: STMicroelectronics Incorporated (STMicroelectronics NV)
• Inventors: McAlexander, Joseph Colby III
• Primary Examiner(s): Mulpuri; Savitri
• Application Number:
  US11/024,192
• Publication Number:
  US 20060138573A1
• Time in Patent Office: 784 Days
• Field of Search: 438 48- 53, 438/694, 438700-703, 438/629, 216/2, 257/E21.597
• US Class Current: 438/48
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/032 Bimorph and unimorph actuators, e.g. piezo and thermo
• CPC Class Codes: B81C 1/0015 Cantilevers switches using MEMS H01H1/0036; electrostatic relays using micromechanics H01H59/0009; microelectro-mechanical resonators H03H9/02244
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/135 by making use of contacts which are actuated by a movable inertial mass
• CPC Class Codes: G01P 2015/0828 the mass being of the paddle type being suspended at one of its longitudinal ends
• CPC Class Codes: H01H 1/0036 Switches making use of microelectromechanical systems [MEMS] for electromagnetic relays H01H50/005; for electrostatic relays H01H59/0009
• CPC Class Codes: H01H 35/14 Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch wherein the liquid constitutes a contact of the switch H01H29/002

Abstract

An acceleration sensor includes a semiconductor substrate, a first layer formed on the substrate, a first aperture within the first layer, and a beam coupled at a first end to the substrate and suspended above the first layer for a portion of the length thereof. The beam includes a first boss coupled to a lower surface thereof and suspended within the first aperture, and a second boss coupled to an upper surface of the second end of the beam. A second layer is positioned on the first layer over the beam and includes a second aperture within which the second boss is suspended by the beam. Contact surfaces are positioned within the apertures such that acceleration of the substrate exceeding a selected threshold in either direction along a selected axis will cause the beam to flex counter to the direction of acceleration and make contact through one of the bosses with one of the contact surfaces.

Claims

1. A method, comprising:

forming a first layer on a surface of a semiconductor wafer;

forming a first aperture in the first layer;

forming a second layer over the first layer and within the aperture;

forming a third layer of semiconductor material over the second layer and in the aperture, to form a first plug in the aperture;

forming a fourth layer over the third layer and in contact with the first plug;

patterning the fourth layer to form a beam;

forming a fifth layer over the fourth layer;

forming an aperture in the fifth layer having a shape substantially mirroring the shape of the first plug;

filling the aperture in the fifth layer to form a second plug in contact with the beam;

removing the fifth layer such that the second plug remains on the beam;

forming a sixth layer over the second plug and beam having a thickness substantially equal to a thickness of the second layer;

forming a seventh layer over the sixth layer; and

etching the second and sixth layers to form a cantilever of the beam with one end suspended above the first aperture, the first plug coupled to the beam and suspended at least partially within the first aperture, the second plug coupled to the beam and at least partially suspended within a second aperture formed in the seventh layer by the second plug and the sixth layer.

2. The method of claim 1, further comprising forming an eighth layer of material above the surface of the semiconductor wafer prior to forming the first layer.

3. The method of claim 1, further comprising forming a cylindrical region along at least a portion of a length of the beam.

4. The method of claim 3, further comprising forming a plurality of contact surfaces within each of the first and second apertures.

5. A method comprising:

forming a first aperture in a first layer of a semiconductor substrate;

forming a beam having first and second ends, the first end coupled to the substrate and the second end positioned over the first aperture;

forming a second layer over the first layer and spaced apart from the beam such that the beam is between the first and second layers;

forming a second aperture in the second layer above the second end of the beam; and

forming first and second bosses of semiconductor material on the second end of the beam such that the first boss extends into the first aperture and the second boss extends into the second aperture.

6. The method of claim 5, comprising forming first and second contact surfaces inside the first and second apertures, respectively.

7. The method of claim 6, comprising providing a detector circuit electrically coupled to the first and second contact surfaces and the first and second bosses, and configured to detect electrical contact between the first contact surface and the first boss and between the second contact surface and the second boss.

8. The method of claim 7 wherein the providing step comprises forming the detector circuit on the semiconductor substrate.

9. The method of claim 6, comprising providing a detector circuit electrically coupled to the first and second contact surfaces and the first and second bosses, and configured to detect changes in capacitive coupling between the first contact surface and the first boss and between the second contact surface and the second boss.

10. The method of claim 6, comprising selecting a mass of the first and second bosses such that one of the first or second bosses makes electrical contact with the respective one of the first or second contact surfaces in response to a selected level of acceleration along an axis lying substantially perpendicular to a longitudinal axis of the beam.

11. The method of claim 5, comprising:

forming a first plurality of contact surfaces inside the first aperture; and

forming a second plurality of contact surfaces inside the second aperture.

12. The method of claim 11, comprising providing a detector circuit electrically coupled to each of the first plurality of contact surfaces, each of the second plurality of contact surfaces, and the first and second bosses, and configured to detect electrical contact between either of the first or second bosses and any of the first and second pluralities of contact surfaces.

13. The method of claim 11, comprising selecting a mass of the first and second bosses such that one of the first or second bosses makes electrical contact with at least one of the first or second pluralities of contact surfaces, respectively, in response to a selected level of acceleration along a plane lying substantially perpendicular to a longitudinal axis of the beam.

14. The method of claim 5, comprising narrowing a portion of the beam between the first and second end.