Wafer processing method
First Claim
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1. A laser processing method for processing a wafer by applying a laser beam to a predetermined area of the wafer, comprising:
- a resin film forming step for forming a resin film which absorbs a laser beam, on a surface to be processed of the wafer, wherein the resin film is formed of a water-soluble light absorbing resin prepared by mixing a light absorber with a water-soluble resin;
a laser beam application step for applying a laser beam having a wavelength of 355 nm to the surface to be processed of the wafer through the resin film to form grooves in the wafer; and
a resin film removal step for removing the resin film after the laser beam application step.
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Abstract
A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.
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7 Claims
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1. A laser processing method for processing a wafer by applying a laser beam to a predetermined area of the wafer, comprising:
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a resin film forming step for forming a resin film which absorbs a laser beam, on a surface to be processed of the wafer, wherein the resin film is formed of a water-soluble light absorbing resin prepared by mixing a light absorber with a water-soluble resin; a laser beam application step for applying a laser beam having a wavelength of 355 nm to the surface to be processed of the wafer through the resin film to form grooves in the wafer; and a resin film removal step for removing the resin film after the laser beam application step. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification