Recovery of hydrophobicity of low-k and ultra low-k organosilicate films used as inter metal dielectrics

• US 7,179,758 B2
• Filed: 05/25/2004
• Issued: 02/20/2007
• Est. Priority Date: 09/03/2003
• Status: Expired due to Fees

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Dimitrakopoulos, Christos D., Purushothaman, Sampath, Pfeiffer, Dirk, Colburn, Matthew E., Nitta, Satyanarayana V., Chakrapani, Nirupama
• Primary Examiner(s): LINDSAY JR, WALTER LEE
• Application Number:
  US10/853,771
• Publication Number:
  US 20050106762A1
• Time in Patent Office: 1,001 Days
• Field of Search: 438/782, 438/702, 438/692, 438/778, 257/E21.273, 257/E21.576, 257/E21.579, 257/E21.261
• US Class Current: 438/782
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76826 by contacting the layer with gases, liquids or plasmas
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

Often used to reduce the RC delay in integrated circuits are dielectric films of porous organosilicates which have a silica like backbone with alkyl or aryl groups (to add hydrophobicity to the materials and create free volume) attached directly to the Si atoms in the network. Si—R bonds rarely survive an exposure to plasmas or chemical treatments commonly used in processing; this is especially the case in materials with an open cell pore structure. When Si—R bonds are broken, the materials lose hydrophobicity, due to formation of hydrophilic silanols and low dielectric constant is compromised. A method by which the hydrophobicity of the materials is recovered using a novel class of silylation agents which may have the general formula (R₂N)_XSiR′_Y where X and Y are integers from 1 to 3 and 3 to 1 respectively, and where R and R′ are selected from the group of hydrogen, alkyl, aryl, allyl and a vinyl moiety. Mechanical strength of porous organosilicates is also improved as a result of the silylation treatment.

Claims

1. A method for restoring properties of a low k or very low dielectric constant organosilicate film having hydrogen atoms or alkyl or aryl groups attached to silicon atoms, and used in a low or very low dielectric constant insulating layer in a semiconductor chip, or chip carrier, or a semiconductor wafer wherein said organosilicate film has undergone processing tending to degrade the properties, the method comprising:

applying to the film a silylating agent comprising an aminosilane, so as to restore dielectric properties of the film, wherein the aminosilane has the general formula (R₂N)_xSiR′

_YR″

_Z where X, Y and Z are integers with x varying from 1 to 3, and Y and Z varying from 3 to 0 respectively but where x+y+z is always equal to 4, and where R, R′

, and R″

are any hydrogen, methyl, aryl, allyl, phenyl or vinyl moiety.

2. A method as recited in claim 1, wherein the silylating agent comprises:

(Bis) dimethylaminodimethylsilane or

(Bis) dimothylaminomethylsilane.

5. A method as recited in claim 1 wherein a single damascene or a dual damascene processing is used, and said applying of said silylating agent is performed after definition of at least one of an interconnect line and a via, and prior to deposition of an electrical conductor.

6. A method as recited in claim 5, wherein said applying of said silylating agent is performed prior to deposition of a conductive liner.

7. A method as recited in claim 1, wherein said silylating agent is applied by one of spin coating a liquid, immersing the substrate in a liquid, spray coating the substrate with the liquid, in a vapor phase, or dissolved in super critical carbon dioxide.

8. A method as recited in claim 1, wherein said silylating agent is dissolved in super critical carbon dioxide with a co-solvent selected from the group comprising at least one of alkanes, alkenes, ketones, ethers, and esters.

9. A method as recited in claim 1, wherein said silylating agent is applied in an absence of moisture.

10. A method as recited in claim 1, further comprising annealing the film.

11. A method as recited in claim 10, wherein the annealing is at a temperature of at least 350°

C.

12. A method as recited in claim 10, wherein said annealing is performed after applying said silylating agent.

13. A method as recited in claim 10, wherein said annealing is performed before applying said silylating agent.

14. A method as recited in claim 13, wherein said applying of said silylating agent is performed at a temperature of at least 25°

C.

15. A method as recited in claim 10, wherein said annealing is performed to facilitate at least one of condensing silanols in the film, and forming additional siloxane bonds.

16. A method as recited in claim 1, wherein the silylating agent is dissolved in a solvent.

17. A method as recited in claim 16, wherein the solvent is a non-polar organic solvent with low surface tension selected from the group comprising alkanes, alkenes, ketones, ethers, esters, or any combinations thereof.

18. A method as recited in claim 16, wherein the solvent has a low enough surface tension so as to penetrate pores in said film.

19. A method as recited in claim 16, wherein said silylating agent has a concentration of between two per cent and ten per cent by weight in said solvent.

20. A method as recited in claim 16, wherein said silylating agent has a concentration of one half per cent or greater by weight in said solvent.

21. A method as recited in claim 1, wherein said silylating agent is applied for a period of time between thirty seconds and one hour.

22. A method as recited in claim 1, wherein said silylating agent is applied at room temperature or higher.

23. A method as recited in claim 1, further comprising performing one of agitation or ultrasonification when the silylating agent is applied.

24. A method as recited in claim 1, further comprising rinsing the film to remove excess silylating agent.

25. A method as recited in claim 1, further comprising baking the film.

26. A method as recited in claim 25, wherein the baking is performed at a temperature of up to 450°

C.

27. A method as recited in claim 1, wherein the silylating agent is applied in a vapor phase, at temperatures between room temperature and 450°

C., for a duration of thirty seconds to one hour.

28. A method as recited in claim 1, wherein the silylating agent is applied in a vapor phase, at a temperatures of substantially 250°

C., for a duration of five minutes.

29. A method as recited in claim 1, wherein the silylating agent is applied in super critical carbon dioxide, at temperatures between 250°

C. and 450°

C., at a pressure between 1,000 and 10,000 psi, for a duration of thirty seconds to one hour.

30. A method as recited in claim 1, wherein the silylating agent is difunctional.

31. A method as recited in claim 1, wherein the silylating agent is applied in super critical carbon dioxide or vapor media at temperature in excess of 75°

C. for times in excess of 30 seconds.

32. A method as recited in claim 31, further comprising annealing the layer at substantially 400°

C. for a period in excess of one minute.

33. A method as recited in claim 1, wherein said step of applying the silylating agent follows treatment of said film with one of ultraviolet radiation, exposure to ozone, exposure to a mildly oxidizing plasma or combinations thereof that introduces silanols into the film.

34. A method as recited in claim 1, carried out in a chemical vapor deposition chamber, or an atomic layer deposition chamber.

35. A method as recited in claim 1, wherein the properties that are restored include at least one of hydrophobicity, elastic modulus, low dielectric constant, fracture toughness and hardness.

36. A method as recited in claim 1, wherein said film includes one or more additional intermetal dielectrics.

37. A method as recited in claim 36, wherein said additional intermetal dielectrics are selected from the group consisting of silicon dioxide, fluorinated tetraethyl orthosilicate, fluorinated silica glass, fluorinated or non-fluorinated organic polymers, thermoset polymers, and chemical vapor deposited polymers.

38. A method as recited in claim 36, wherein said additional intermetal dielectric is an organic polymer selected from the group of polyimides, benzocyclobutene, polybenzoxazoles, and aromatic thermosets.

39. A method as recited in claim 37, wherein said thermoset polymers are based on polyarylene ethers.

40. A method as recited in claim 37, wherein said chemical vapor deposited polymer is poly paraxylylene.

3. A method as recited in 1, wherein the processing includes etching of the film, and removing a photresist material from the film, wherein the silylating agent is applied after the etching and the removing.

4. A method as recited in claim 3, wherein the etching and removing are performed by exposing the film to a plasma.

41. A method for restoring properties of a low k or very low dielectric constant organosilicate film having hydrogen atoms or alkyl or aryl groups attached to silicon atoms, and used in a low or very low dielectric constant insulating layer in a semiconductor chip, or chip carrier, or a semiconductor wafer wherein said organosilicate film has undergone processing tending to degrade the properties, the method comprising:

applying to the film a silylating agent comprising an aminosilane, so as to restore dielectric properties of the film, wherein the aminosilane has the general formula (R₂N)_xSiR′

_Y where X and Y are integers from 3 to 2 and 1 to 2 respectively, and where R and R″

are selected from the group consisting of hydrogen, alkyl, aryl, allyl, phenyl and a vinyl moiety.

44. A method as recited in claim 41, wherein a single damascene or a dual damascene processing is used, and said applying of said silylating agent is performed after definition of at least one of an interconnect line and a via, and prior to deposition of an electrical conductor.

45. A method as recited in claim 44, wherein said applying of said silylating agent is performed prior to deposition of a conductive liner.

46. A method as recited in claim 41, wherein said silylating agent is applied by one of spin coating a liquid, immersing the substrate in a liquid, spray coating the substrate with the liquid, in a vapor phase, or dissolved in super critical carbon dioxide.

47. A method as recited in claim 41, wherein said silylating agent is dissolved in super critical carbon dioxide with a co-solvent selected from the group comprising at least one of alkanes, alkenes, ketones, ethers, and esters.

48. A method as recited in claim 41, wherein said silylating agent is applied in an absence of moisture.

49. A method as recited in claim 41, further comprising annealing the film.

50. A method as recited in claim 49, wherein the annealing is at a temperature of at least 350°

C.

51. A method as recited in claim 49, wherein said annealing is performed after applying said silylating agent.

52. A method as recited in claim 49, wherein said annealing is performed before applying said silylating agent.

53. A method as recited in claim 52, wherein said applying of said silylating agent is performed at a temperature of at least 250°

C.

54. A method as recited in claim 49, wherein said annealing is performed to facilitate at least one of condensing silanols in the film, and forming additional siloxane bonds.

55. A method as recited in claim 41, wherein the silylating agent is dissolved in a solvent.

56. A method as recited in claim 55, wherein the solvent is a non-polar organic solvent with low surface tension selected from the group comprising alkanes, alkenes, ketones, ethers, esters, or any combinations thereof.

57. A method as recited in claim 55, wherein the solvent has a low enough surface tension so as to penetrate pores in said film.

58. A method as recited in claim 55, wherein said silylating agent has a concentration of between two per cent and ten per cent by weight in said solvent.

59. A method as recited in claim 55, wherein said silylating agent has a concentration of one half per cent or greater by weight in said solvent.

60. A method as recited in claim 41, wherein said silylating agent is applied for a period of time between thirty seconds and one hour.

61. A method as recited in claim 41, wherein said silylating agent is applied at room temperature or higher.

62. A method as recited in claim 41, further comprising performing one of agitation or ultrasonification when the silylating agent is applied.

63. A method as recited in claim 41, further comprising rinsing the film to remove excess silylating agent.

64. A method as recited in claim 41, further comprising baking the film.

65. A method as recited in claim 64, wherein the baking is performed at a temperature of up to 450°

C.

66. A method as recited in claim 41, wherein the silylating agent is applied in a vapor phase, at temperatures between room temperature and 450°

C., for a duration of thirty seconds to one hour.

67. A method as recited in claim 41, wherein the silylating agent is applied in a vapor phase, at a temperatures of substantially 250°

C., for a duration of five minutes.

68. A method as recited in claim 41, wherein the silylating agent is applied in super critical carbon dioxide, at temperatures between 25°

C. and 450°

C., at a pressure between 1,000 and 10,000 psi, for a duration of thirty seconds to one hour.

69. A method as recited in claim 41, wherein the silylating agent is difunctional.

70. A method as recited in claim 41, wherein the silylating agent is applied in super critical carbon dioxide or vapor media at temperature in excess of 75°

C. for times in excess of 30 seconds.

71. A method as recited in claim 70, further comprising annealing the layer at substantially 400°

C. for a period in excess of one minute.

72. A method as recited in claim 41, wherein said step of applying the silylating agent follows treatment of said film with one of ultraviolet radiation, exposure to ozone, exposure to a mildly oxidizing plasma or combinations thereof that introduces silanols into the film.

73. A method as recited in claim 41, carried out in a chemical vapor deposition chamber, or an atomic layer deposition chamber.

74. A method as recited in claim 41, wherein the properties that are restored include at least one of hydrophobicity, elastic modulus, low dielectric constant, fracture toughness and hardness.

75. A method as recited in claim 41, wherein said film includes one or more additional intermetal dielectrics.

76. A method as recited in claim 75, wherein said additional intermetal dielectrics are selected from the group consisting of silicon dioxide, fluorinated tetraethyl orthosilicate, fluorinated silica glass, fluorinated or non-fluorinated organic polymers, thermoset polymers, and chemical vapor deposited polymers.

77. A method as recited in claim 75, wherein said additional intermetal dielectric is an organic polymer selected from the group of polyimides, benzocyclobutene, polybenzoxazoles, and aromatic thermosets.

78. A method as recited in claim 76, wherein said thermoset polymers are based on polyarylene ethers.

79. A method as recited in claim 76, wherein said chemical vapor deposited polymer is poly paraxylylene.

42. A method as recited in 41, wherein the processing includes etching of the film, and removing a photresist material from the film, wherein the silylating agent is applied after the etching and the removing.

43. A method as recited in claim 42, wherein the etching and removing are performed by exposing the film to a plasma.