Semiconductor device and manufacturing method thereof

• US 7,180,091 B2
• Filed: 07/31/2002
• Issued: 02/20/2007
• Est. Priority Date: 08/01/2001
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Yamazaki, Shunpei
• Primary Examiner(s): Tran; Thien F
• Application Number:
  US10/208,246
• Publication Number:
  US 20030047732A1
• Time in Patent Office: 1,665 Days
• Field of Search: 257/59, 257/72, 257/258, 257/291
• US Class Current: 257/59
• CPC Class Codes: G02F 1/133305 Flexible substrates, e.g. plastics, organic film
• CPC Class Codes: G02F 1/13454 Drivers integrated on the active matrix substrate G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13613 the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H01L 2924/3511 Warping
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays

Abstract

The invention relates to a semiconductor device including a plurality of thin film transistors provided on a base member having a curved surface. The surface may be bent in either a convex shape or a concave shape. All channel length directions of the plurality of thin film transistors may also be aligned in the same direction. Further, the channel length direction may be different from the direction in which the base member is bent. A pixel portion and a driver circuit portion may also be provided on the base member. The invention also includes a method of manufacturing a semiconductor device including forming a layer to be peeled including an element of a substrate, bonding a support member to the layer to be peeled, and bonding a transfer body to the layer to be peeled.

Claims

1. A semiconductor device comprising:

a plurality of thin film transistors provided over a base member having a curved surface which is bent in one of a convex shape and a concave shape,

wherein all channel length directions of the plurality of thin film transistors are aligned with a same direction, and

the channel length directions are different from a direction in which the base member is bent.

2. A device according to claim 1,

wherein the channel length directions are the same direction as a scanning direction of laser light irradiated to semiconductor layers for the thin film transistors.

3. A device according to claim 1,

wherein the direction in which the base member is bent is orthogonal to the channel length directions.

4. A semiconductor device comprising:

a pixel portion and a driver circuit portion provided over a base member having a curved surface which is bent in one of a convex shape and a concave shape,

wherein a channel length direction of a thin film transistor provided to the pixel portion and that of a thin film transistor provided to the driver circuit portion are aligned with the same direction, and

the channel length directions are different from a direction in which the base member is bent.

5. A device according to claim 4,

wherein the channel length directions are the same direction as a scanning direction of laser light irradiated to semiconductor layers for the thin film transistors.

6. A device according to claim 4,

wherein the direction in which the base member is bent is orthogonal to the channel length directions.

7. A semiconductor device comprising:

a plurality of thin film transistors provided over a base member having a curved surface which is capable of being bent in one of a convex shape and a concave shape,

wherein all channel width directions of the plurality of thin film transistors are aligned with the same direction, and

the channel width directions are not orthogonal to a direction in which the base member is bent.

8. A semiconductor device comprising a plurality of thin film transistors,

wherein all channel length directions of the plurality of thin film transistors provided over a surface of a base member including a curved surface having a direction with a curvature and a direction with no curvature are aligned with the same direction, and

the channel length directions are the same direction as the direction with no curvature.

9. A device according to claim 8,

wherein the channel length directions are the same direction as a scanning direction of laser light irradiated to semiconductor layers for the thin film transistors.

10. A semiconductor device comprising:

a plurality of thin film transistors provided over a base member which can be bent in one of a convex shape and a concave shape,

wherein all channel length directions of the plurality of thin film transistors are aligned with the same direction, and

a direction in which the base member can be bent is different from the channel length directions.

11. A device according to claim 10,

wherein the channel length directions are the same direction as a scanning direction of laser light irradiated to semiconductor layers for the thin film transistors.

12. A device according to claim 10,

wherein the direction in which the base member is bent is orthogonal to the channel length directions.

13. A semiconductor device comprising:

a scan line driver circuit comprising a plurality of thin film transistors provided over a base member having a curved surface which is bent in one of a convex shape and a concave shape,

wherein all channel length directions of the plurality of thin film transistors are aligned with the same direction, and

wherein the channel length directions are different from a direction in which the base member is bent.

14. A device according to claim 13,

wherein the channel length directions are the same direction as a scanning direction of laser light irradiated to semiconductor layers for the thin film transistors.

15. A device according to claim 13,

wherein the direction in which the base member is bent is orthogonal to the channel length directions.

16. A semiconductor device comprising:

a data line driver circuit comprising a plurality of thin film transistors provided over a base member having a curved surface which is bent in one of a convex shape and a concave shape,

wherein all channel length directions of the plurality of thin film transistors are aligned with a same direction, and

wherein the channel length directions are different from a direction in which the base member is bent.

17. A device according to claim 16,

wherein the channel length directions are the same direction as a scanning direction of laser light irradiated to semiconductor layers for the thin film transistors.

18. A deviced according to claim 16,

wherein the direction in which the base member is bent is orthogonal to the channel length directions.

19. A semiconductor device comprising:

a pixel portion comprising a plurality of thin film transistors provided over a base member having a curved surface which is bent in one of a convex shape and a concave shape,

wherein all channel length directions of the plurality of thin film transistors are aligned with a same direction, and

wherein the channel legth directions are different from a direction in which the base member is bent.

20. A device according to claim 19,

wherein the channel length directions are the same direction as a scanning direction of laser light irradiated to semiconductor layers for the thin film transistors.

21. A device according to claim 19,

wherein the direction in which the base member is bent is orthogonal to the channel length directions.