Method for switching driving of a semiconductor switching element
First Claim
1. A method for driving a semiconductor switching element having a switching state that is a function of a charge stored on a drive electrode, and which includes a drive terminal configured to receive a drive signal and a load path, the method comprising:
- a) applying a drive signal configured to switch the semiconductor element such that a change in the charge stored on the drive electrode occurs over time, the drive signal having one or more predetermined parameters that define a time profile of the drive signal,b) determining a deviation between an ideal switching instant of the semiconductor switching element and an actual switching instant of the semiconductor switching element, the ideal switching instant defined in reference to at least one of the time profile of the drive signal or a signal having a characteristic that is dependent on the time profile of the drive signal, andc) changing at least one of the one or more predetermined parameters of the drive signal for a next switching operation based on the determined deviation.
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Abstract
A method of driving a semiconductor switching element includes applying a drive signal configured to switch the semiconductor element such that a change in the charge stored on the drive electrode occurs over time, the drive signal having one or more predetermined parameters that define a time profile of the drive signal. The method also includes determining a deviation between an ideal switching instant of the semiconductor switching element and an actual switching instant of the semiconductor switching element, the ideal switching instant defined in reference to the time profile of the drive signal and/or a signal having a characteristic that is dependent on the time profile of the drive signal. The method further includes changing at least one of the predetermined parameters of the drive signal for a next switching operation based on the determined deviation.
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Citations
20 Claims
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1. A method for driving a semiconductor switching element having a switching state that is a function of a charge stored on a drive electrode, and which includes a drive terminal configured to receive a drive signal and a load path, the method comprising:
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a) applying a drive signal configured to switch the semiconductor element such that a change in the charge stored on the drive electrode occurs over time, the drive signal having one or more predetermined parameters that define a time profile of the drive signal, b) determining a deviation between an ideal switching instant of the semiconductor switching element and an actual switching instant of the semiconductor switching element, the ideal switching instant defined in reference to at least one of the time profile of the drive signal or a signal having a characteristic that is dependent on the time profile of the drive signal, and c) changing at least one of the one or more predetermined parameters of the drive signal for a next switching operation based on the determined deviation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A method for driving a semiconductor switching element having a switching state that is a function of a charge stored on a drive electrode, and which has a drive terminal configured to receive a drive signal and a load path, the method comprising:
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a) applying a drive signal operable to switch the semiconductor switching element, the drive signal selected such that a change in the charge stored on the drive electrode occurs over time, the drive signal having at least one predefined signal parameter that defines the time profile of the drive signal, b) determining whether a switching operation of the semiconductor switching element has already been performed within a predefined window of a predefined instant with reference to the time profile of the drive signal, and c) changing at least one of the at least one predefined signal parameter of the drive signal for a next switching operation when no switching operation by the semiconductor switching element has been performed within the predefined window of the predefined instant. - View Dependent Claims (19, 20)
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Specification