High frequency power amplifier module and semiconductor integrated circuit device

• US 7,180,373 B2
• Filed: 06/08/2004
• Issued: 02/20/2007
• Est. Priority Date: 07/09/2003
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Hitachi ULSI Systems Company Limited (Hitachi, Ltd.), Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Sasaki, Satoshi, Adachi, Tetsuaki, Imai, Shun, Nakazawa, Katsunari
• Primary Examiner(s): Choe; Henry
• Application Number:
  US10/862,325
• Publication Number:
  US 20050009484A1
• Time in Patent Office: 987 Days
• Field of Search: 330/307, 330/302, 330/124.R, 330/295, 330/84, 330/126
• US Class Current: 330/307
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/3011 Impedance
• CPC Class Codes: H01L 2924/30111 matching
• CPC Class Codes: H03F 2200/39 Different band amplifiers are coupled in parallel to broadband the whole amplifying circuit
• CPC Class Codes: H03F 3/195 in integrated circuits
• CPC Class Codes: H03F 3/24 of transmitter output stages
• CPC Class Codes: H03F 3/602 Combinations of several amplifiers
• CPC Class Codes: H04B 1/005 adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
• CPC Class Codes: H04B 2001/0408 with power amplifiers

Abstract

Cross-band isolation characteristics are to be significantly improved without using any filtering circuit. In the central part of a semiconductor chip provided in an RF power module is formed a ground wiring layer from the upper part downward. This ground wiring layer is formed on the boundary between GSM side transistors and DCS side transistors for amplifying different frequency bands. Over the ground wiring layer are formed chip electrodes at equal intervals, and any one of the chip electrodes is connected via a bonding wire to a bonding electrode. The bonding electrode is formed over a module wiring board over which the semiconductor chip is to be mounted, and the ground wiring layer is connected to it. Harmonic signals are trapped by the ground wiring layer and the bonding wire.

Claims

1. A high frequency power amplifier module comprising:

first and second power amplifier sections, formed over a semiconductor chip, for amplifying high frequency signals of two different frequency bands;

an input matching circuit for matching impedances of signals to be entered into said first and second power amplifier sections;

an output matching circuit for matching the impedances of signals to be supplied from said first and second power amplifier sections; and

a module wiring board for mounting thereover said semiconductor chip, said input matching circuit and said output matching circuit,

wherein a reference potential region is formed between said first power amplifier section and second power amplifier section over a main face of said semiconductor chip, and

wherein said reference potential region is connected by way of a via hole to a reference potential layer provided over a back face of said semiconductor chip.

2. The high frequency power amplifier module according to claim 1,

wherein a plurality of bumps for trapping are formed in the reference potential region formed over the main face of said semiconductor chip.

3. The high frequency power amplifier module according to claim 1,

wherein a bonding wire for trapping is connected to the reference potential region formed over the main face of said semiconductor chip, and

wherein said reference potential region is connected via said bonding wire for trapping to a reference potential wiring layer formed over said module wiring board.

4. The high frequency power amplifier module according to claim 3,

wherein said bonding wire for trapping is positioned near the transistor of the final stage provided in the first power amplifier section for amplifying high frequency signals of the lower frequency band of two different frequency bands.