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High frequency power amplifier module and semiconductor integrated circuit device

  • US 7,180,373 B2
  • Filed: 06/08/2004
  • Issued: 02/20/2007
  • Est. Priority Date: 07/09/2003
  • Status: Expired due to Fees
First Claim
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1. A high frequency power amplifier module comprising:

  • first and second power amplifier sections, formed over a semiconductor chip, for amplifying high frequency signals of two different frequency bands;

    an input matching circuit for matching impedances of signals to be entered into said first and second power amplifier sections;

    an output matching circuit for matching the impedances of signals to be supplied from said first and second power amplifier sections; and

    a module wiring board for mounting thereover said semiconductor chip, said input matching circuit and said output matching circuit,wherein a reference potential region is formed between said first power amplifier section and second power amplifier section over a main face of said semiconductor chip, andwherein said reference potential region is connected by way of a via hole to a reference potential layer provided over a back face of said semiconductor chip.

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