Apparatus for providing a ballistic magnetoresistive sensor in a current perpendicular-to-plane mode
First Claim
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1. A ballistic magnetoresistive sensor, comprising:
- a first pinned layer;
a first free layer;
a magnetic nickel nano-contact layer disposed between the pinned layer and the free layer, the magnetic nickel nano-contact layer having a width equal to a width of the first pinned layer and the first free layer; and
a first and second lead layer disposed proximate to the pinned layer and free layer respectively for providing a sense current that flows perpendicular to the planes of the layers.
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Abstract
A method and apparatus for providing a ballistic magnetoresistive sensor in a current perpendicular-to-plane mode is disclosed. A nickel nano-contact is provided in a current perpendicular-to-plane sensor. The nano-contact switches its magnetization with the switching of the free layer to provide an increase in resistance that is used to detect magnetically recorded data.
22 Citations
20 Claims
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1. A ballistic magnetoresistive sensor, comprising:
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a first pinned layer; a first free layer; a magnetic nickel nano-contact layer disposed between the pinned layer and the free layer, the magnetic nickel nano-contact layer having a width equal to a width of the first pinned layer and the first free layer; and a first and second lead layer disposed proximate to the pinned layer and free layer respectively for providing a sense current that flows perpendicular to the planes of the layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A magnetic storage device, comprising:
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at least one magnetic storage medium; a motor for moving the at least one magnetic storage medium; a ballistic magnetoresistive sensor for reading data on the at least one magnetic storage medium, and an actuator assembly, coupled to the ballistic magnetoresistive sensor, for moving the ballistic magnetoresistive sensor relative to the at least one magnetic storage medium, the ballistic magnetoresistive sensor further comprising; a first pinned layer; a first free layer; a magnetic nickel nano-contact layer disposed between the pinned layer and the free layer, the magnetic nickel nano-contact layer having a width equal to a width of the first pinned layer and the first free layer; and a first and second lead layer disposed proximate to the pinned layer and free layer respectively for providing a sense current that flows perpendicular to the planes of the layers. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A ballistic magnetoresistive sensor, comprising:
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means for providing a pinned layer; means for providing a free layer; means for providing a magnetic nickel nano-contact layer disposed between the means for providing a pinned layer and the means for providing a free layer, the magnetic nickel nano-contact layer having a width equal to a width of the means for providing a pinned layer and the means for providing a free layer; and means for providing a first and second lead layer disposed proximate to the means for providing the pinned layer and free layer respectively, the means for providing a first and second lead layer providing a sense current that flows perpendicular to the planes of the layers.
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20. A magnetic storage device, comprising:
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means for recording magnetic data thereon; means for moving the means for recording magnetic data; means for reading data on the means for recording magnetic data; and means, coupled to the means for reading, for moving the means for reading relative to the means for storing data, the means for reading further comprising; means for providing a pinned layer; means for providing a free layer; means for providing a magnetic nickel nano-contact layer disposed between the means for providing a pinned layer and the means for providing a free layer, the magnetic nickel nano-contact layer having a width equal to a width of the means for providing a pinned layer and the means for providing a free layer; and means for providing a first and second lead layer disposed proximate to the means for providing the pinned layer and free layer respectively, the means for providing a first and second lead layer providing a sense current that flows perpendicular to the planes of the layers.
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Specification